Jpn. J. Appl. Phys. 48 (2009) 06FD11 (3 pages)  |Table of Contents|
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Charge Trapping Characteristics of Variable Oxide Thickness Tunnel Barrier with SiO₂/HfO₂ or Al₂O₃/HfO₂ Stacks for Nonvolatile Memories

Kwan-Su Kim, Myung-Ho Jung, Goon-Ho Park, Jongwan Jung, and Won-Ju Cho

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