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Ink-Jet Printing of a Single-Walled Carbon Nanotube Thin Film Transistor

Haruya Okimoto, Taishi Takenobu, Kazuhiro Yanagi1,2, Yasumitsu Miyata1, Hiromichi Kataura1,2, Takeshi Asano3, and Yoshihiro Iwasa

Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
1Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8562, Japan
2Japan Science and Technology Agency (JST), CREST, Kawaguchi, Saitama 330-0012, Japan
3Brother Industries, Ltd., Nagoya 467-8561, Japan

(Received November 29, 2008; accepted January 12, 2009; published online June 22, 2009)

Single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) were fabricated using ink-jet printing. We printed both thick source–drain electrodes and thin active semiconducting films using N,N-dimethylformamide (DMF)-based SWCNT dispersion. Despite the presence of metallic SWCNTs, the device exhibited field-effect behavior, with an effective mobility of 2.99 cm2 V-1 s-1 and an on/off current ratio of up to 75. The method used in this study is promising for the fabrication of large-scale high-performance SWCNT-TFTs.

URL: http://jjap.jsap.jp/link?JJAP/48/06FF03/
DOI: 10.1143/JJAP.48.06FF03


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