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Nanosized Poly(tetrafluoroethylene) Films as Organic Insulating Barrier for Fe/Poly(tetrafluoroethylene)/Fe Magnetic Tunnel Junction

S. Sundar Manoharan and Vimlesh Chandra

(Received November 13, 2008; revised February 2, 2009; accepted February 18, 2009; published online October 20, 2009)

Nanofilms of poly(tetrafluoroethylene) (PTFE; commercially coded as Teflon) shows advantage over inorganic spacer materials like Al₂O₃ and MgO in fabricating tunneling magneto resistive devices due to its relative dielectric constant and chemical inertness to provide a homogenous metal–organic interface. Pulsed electron deposition proves useful in fabricating such thin PTFE films (3–6 nm) for trilayer device such as Fe (100 nm)/PTFE (3–6 nm)/Fe (100 nm) on Si(100). Characteristic magnetic hysteresis loops demonstrating the magnetic tunnel junctions were realized for a PTFE organic layer thickness is less than 3 nm. The tunneling magnetoresistance measurement at room temperature shows a typical magnetoresistive feature, increasing with increasing PTFE thickness.

URL: http://jjap.jsap.jp/link?JJAP/48/103001/
DOI: 10.1143/JJAP.48.103001

References

1. C. Felser, G. H. Fecher, and B. Balke: Angew. Chem., Int. Ed. 46 (2007) 668.
2. X. G. Zhang, W. H. Butler, and A. Bandyopadhyay: Phys. Rev. B 68 (2003) 92402[APS].
3. T. Miyazaki and N. Tezuka: J. Magn. Magn. Mater. 139 (1995) L231.
4. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey: Phys. Rev. Lett. 74 (1995) 3273[APS].
5. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S.-H. Yang: Nat. Mater. 3 (2004) 862[CrossRef].
6. Z. H. Xiong, Di Wu, Z. V. Vardeny, and J. Shi: Nature (London) 427 (2004) 821[CrossRef].
7. O. Mermer, G. Veeraraghavan, T. L. Francis, Y. Sheng, D. T. Nguyen, M. Wohlgenannt, A. Kohler, M. K. Al-Suti, and M. S. Khan: Phys. Rev. B 72 (2005) 205202[APS].
8. S. Majumdar, R. Laiho, P. Laukkanen, I. J. Varynen, H. S. Majumdar, and R. Osterbacka: Appl. Phys. Lett. 89 (2006) 122114[AIP Scitation].
9. M. Popinciuc, H. T. Jonkman, and B. J. van Wees: J. Appl. Phys. 100 (2006) 93714[AIP Scitation].
10. V. Dediu, M. Murgia, F. C. Matacotta, C. Taliani, and S. Barbanera: Solid State Commun. 122 (2002) 181[CrossRef].
11. K. Tsukagoshi, B. W. Alphenaar, and H. Ago: Nature (London) 401 (1999) 572[CrossRef].
12. J. R. Petta, S. K. Slater, and D. C. Ralph: Phys. Rev. Lett. 93 (2004) 136601[APS].
13. T. X. Wang, H. X. Wei, Z. M. Zeng, X. F. Han, Z. M. Hong, and G. Q. Shi: Appl. Phys. Lett. 88 (2006) 242505[AIP Scitation].
14. J. G. Simmons: J. Appl. Phys. 34 (1963) 1793[AIP Scitation].
15. V. Chandra and S. S. Manoharan: Appl. Surf. Sci. 254 (2008) 4063[CrossRef].
16. N. A. Morely, A. Rao, D. Dhandapani, M. R. J. Gibbs, M. Grell, and T. Richerdson: J. Appl. Phys. 103 (2008) 07F306[AIP Scitation].
17. M. Julliere: Phys. Lett. A 54 (1975) 225[CrossRef].
18. J. M. De Teresa, A. Barthelemy, A. Fert, J. P. Contour, F. Montaigne, and P. Seneor: Science 286 (1999) 507[Science].
19. S. Mukhopadhyay and I. Das: Phys. Rev. Lett. 96 (2006) 26601[APS].
20. D. Y. Hu, H. Guo, and X. F. Han: Phys. Rev. B 78 (2008) 193307[APS].
21. B. J. J. Akerman, R. Escudero, C. Leighton, S. Kim, I. K. Schuller, and D. A. Rabson: Appl. Phys. Lett. 77 (2000) 1870[AIP Scitation].