Jpn. J. Appl. Phys. 49 (2010) 021004 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes

Mu-Jen Lai, Ming-Jer Jeng, and Liann-Be Chang

(Received September 29, 2009; accepted November 10, 2009; published online February 22, 2010)

We demonstrate the characteristics of high-efficiency yellow-green InGaN-based light-emitting diodes (LEDs) with a strain-accommodative layer and textured surface. The LEDs have chip dimensions of 420×350 µm² and are packaged in the conventional lamp form. The peak wavelength, optical output power, luminaire efficiency, and external quantum efficiency are 560.7 nm, 0.926 mW, 7.8 lm/W, and 2.1%, respectively, at a driving current of 20 mA. In addition, the output power slope (mW/mA) is 3.3×10^-2. It is found that there is potential to improve external quantum efficiency by introducing a chirp InGaN/GaN superlattice structure as the strain-accommodative layer and texturing the surface of the top P-layer in yellow-green InGaN/GaN LEDs. The low power slope can be attributed chiefly to the inferior crystalline quality due to unfavorable growth conditions of InGaN/GaN multiple quantum wells and partially to the stronger internal electric field due to the higher In composition in InGaN wells.

URL: http://jjap.jsap.jp/link?JJAP/49/021004/
DOI: 10.1143/JJAP.49.021004

References | Citing Articles (2)

1. A. A. Bergh and P. J. Dean: Proc. IEEE 60 (1972) 156.
2. R. N. Bhargava: IEEE Trans. Electron Devices 22 (1975) 691[CrossRef].
3. C. H. Chen, S. A. Stockman, M. J. Peanasky, and C. P. Kuo: in Semiconductors and Semimetals, ed. G. B. Stringfellow and M. G. Craford (Academic Press, San Diego, CA, 1997) Vol. 48, Chap. 4, p. 117.
4. T. Mukai, M. Yamada, and S. Nakamura: Jpn. J. Appl. Phys. 38 (1999) 3976[JSAP].
5. N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair: Appl. Phys. Lett. 72 (1998) 40[AIP Scitation].
6. S. Nakamura and G. Fasol: The Blue Laser Diode (Springer, Berlin, 1997) p. 224.
7. N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies: J. Appl. Phys. 86 (1999) 3714[AIP Scitation].
8. F. Shahedipour-Sandvik, J. R. Grandusky, M. Jamil, V. Jindal, S. B. Schujman, L. J. Schowalter, R. Liu, F. A. Ponce, M. Cheung, and A. Cartwright: Proc. SPIE 5941 (2005) 594107[AIP Scitation].
9. H. S. Chen, C. F. Lu, D. M. Yeh, C. F. Huang, J. J. Huang, and C. C. Yang: IEEE Photonics Technol. Lett. 18 (2006) 2269[CrossRef].
10. P. T. Barletta, E. A. Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair: Appl. Phys. Lett. 90 (2007) 151109[AIP Scitation].
11. T. Detchprohm, M. Zhu, W. Zhao, Y. Wang, Y. Li, Y. Xia, and C. Wetzel: Phys. Status Solidi C 6 (2009) S840[CrossRef].
12. C. M. Tsai, J. K. Sheu, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo, and Y. K. Su: IEEE Photonics Technol. Lett. 18 (2006) 1213[CrossRef].
13. M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai: Jpn. J. Appl. Phys. 45 (2006) L659[JSAP].