Jpn. J. Appl. Phys. 49 (2010) 021005 (3 pages)  |Table of Contents|
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Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors

Nidhi, David F. Brown, Stacia Keller, and Umesh K. Mishra

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