Jpn. J. Appl. Phys. 49 (2010) 02BD02 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (268K)| |Buy This Article|

Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy

Yuki Okigawa¹, Shigeru Kishimoto^1,2, Yutaka Ohno¹, and Takashi Mizutani¹

(Received July 24, 2009; accepted September 24, 2009; published online February 22, 2010)

Electrical properties of a carbon nanotube field-effect transistor (CNT-FET) with multiple CNT channels were studied by scanning gate microscopy (SGM), in which the scanning probe tip was used as a local gate. It was possible to distinguish the difference in electrical properties of individual CNT channels by SGM. Spot like SGM images were attributed to the barrier against carriers formed in the metallic CNT, resulting in a current modulation of the CNT-FET. It has also been shown that the barrier in the metallic CNT results in an ambipolar behavior of the CNT-FETs.

URL: http://jjap.jsap.jp/link?JJAP/49/02BD02/
DOI: 10.1143/JJAP.49.02BD02

References | Citing Article (1)

1. S. Rosenblatt, H. Lin, V. Sazonova, S. Tiwari, and P. L. McEuen: Appl. Phys. Lett. 87 (2005) 153111[AIP Scitation].
2. A. Javey, J. Guo, D. B. Farmaer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. Dai: Nano Lett. 4 (2004) 1319[CrossRef].
3. C. Kocabas, S. Dunham, Q. Cao, K. Cimino, X. Ho, H. S. Kim, D. Dawson, J. Payne, M. Stuenkel, H. Zhang, T. Banks, M. Feng, S. V. Rotkin, and J. A. Rogers: Nano Lett. 9 (2009) 1937[CrossRef].
4. E. S. Snow, P. M. Campbell, M. G. Ancona, and J. P. Novak: Appl. Phys. Lett. 86 (2005) 033105[AIP Scitation].
5. Q. Cao, H. S. Kim, N. Pimparkar, J. P. Kulkarni, C. Wang, M. Shim, K. Roy, M. A. Alam, and J. A. Rogers: Nature 454 (2008) 495[CrossRef].
6. T. Takenobu, N. Miura, S. Y. Lu, H. Okimoto, T. Asano, M. Shiraishi, and Y. Iwasa: Appl. Phys. Express 2 (2009) 025005[JSAP].
7. C. Maeda, S. Kishimoto, T. Mizutani, T. Sugai, and H. Shinohara: Jpn. J. Appl. Phys. 42 (2003) 2449[JSAP].
8. Y. Miyato, K. Kobayashi, K. Matsushige, and H. Yamada: Jpn. J. Appl. Phys. 44 (2005) 1633[JSAP].
9. T. Umesaka, H. Ohnaka, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani: Jpn. J. Appl. Phys. 46 (2007) 2496[JSAP].
10. A. Bachtold, M. S. Fuhrer, S. Plyasunov, M. Forero, E. H. Anderson, A. Zettl, and P. L. McEuen: Phys. Rev. Lett. 84 (2000) 6082[APS].
11. Y. Okigawa, T. Umesaka, Y. Ohno, S. Kishimoto, and T. Mizutani: NANO 3 (2008) 51.
12. S. J. Tans and C. Dekker: Nature (London) 404 (2000) 834[CrossRef].
13. M. Bockrath, W. Liang, D. Bozovic, J. H. Hafner, C. M. Lieber, M. Tinkham, and H. Park: Science 291 (2001) 283[Science].
14. M. Freitag, M. Radosavljevic, Y. Zhou, and A. T. Johnson: Appl. Phys. Lett. 79 (2001) 3326[AIP Scitation].
15. M. Freitag, A. T. Johnson, S. V. Kalinin, and D. A. Bonnell: Phys. Rev. Lett. 89 (2002) 216801[APS].
16. J. Y. Park: Appl. Phys. Lett. 90 (2007) 023112[AIP Scitation].
17. Y. Kojima, S. Kishimoto, Y. Ohno, A. Sakai, and T. Mizutani: Jpn. J. Appl. Phys. 44 (2005) 2600[JSAP].
18. H. Ohnaka, Y. Kojima, S. Kishimoto, Y. Ohno, and T. Mizutani: Jpn. J. Appl. Phys. 45 (2006) 5485[JSAP].
19. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Applenzeller, and Ph. Avouris: Phys. Rev. Lett. 89 (2002) 106801[APS].
20. T. Mizutani, S. Iwatsuki, Y. Ohno, and S. Kishimoto: Jpn. J. Appl. Phys. 44 (2005) 1599[JSAP].
21. G. Zhang, P. Qi, X. Wang, Y. Lu, D. Mann, X. Li, and H. Dai: J. Am. Chem. Soc. 128 (2006) 6026[CrossRef].
22. L.-G. Tien, H.-H. Tsai, F.-Y. Li, and M.-H. Lee: Diamond Relat. Mater. 17 (2008) 563.
23. S. V. Rotkin and K. Hess: Appl. Phys. Lett. 84 (2004) 3139[AIP Scitation].
24. L. F. Chibotaru, S. A. Bovin, and A. Ceulemans: Phys. Rev. B 66 (2002) 161401[APS].