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Low-Voltage Operation of Ink-Jet-Printed Single-Walled Carbon Nanotube Thin Film Transistors
Haruya Okimoto,
Taishi Takenobu,
Kazuhiro Yanagi1,2,
Hizekazu Shimotani,
Yasumitsu Miyata1,
Hiromichi Kataura1,2, and
Yoshihiro Iwasa
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
1Nanotechnology Research Institute, Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
2Japan Science and Technology Agency (JST), CREST, Kawaguchi, Saitama 330-0012, Japan
(Received July 24, 2009; revised August 18, 2009; accepted August 24, 2009; published online February 22, 2010)
We demonstrate a low-voltage and less hysteresis operation of single-walled carbon nanotube thin film transistors (SWCNT-TFTs) using an ionic liquid gate dielectric layer. We fabricated the density controlled SWCNT-TFTs using the inkjet printing technique, where both source/drain electrodes and the semiconducting transistor channel were made from SWCNT films. As the gate dielectric, we have adopted a printable ionic liquid for future all-printable processes and achieved marked improvements in operating voltages and hysteretic response.
URL:
http://jjap.jsap.jp/link?JJAP/49/02BD09/
DOI: 10.1143/JJAP.49.02BD09
- Carbon Nanotubes: Synthesis, Structure Properties and Applications, ed. M. Dresselhaus, G. Dresselhaus, and Ph. Avouris (Springer, Berlin, 2001).
- T. Durkop, S. A. Getty, E. Cobas, and M. S. Fuhrer:
Nano Lett. 4 (2004) 35[CrossRef].
- Z. Yao, C. L. Kane, and C. Dekker:
Phys. Rev. Lett. 84 (2000) 2941[APS].
- A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. J. Dai: Nat. Mater. 1 (2002) 241.
- S. J. Kang, C. Kocabas, T. Ozel, M. Shim, N. Pimparkar, M. A. Alam, S. V. Rotkin, and J. A. Rogers: Nat. Nanotechnol. 2 (2007) 230.
- M. C. LeMieux, M. Roberts, S. Barman, Y. W. Jin, J. M. Kim, and Z. N. Bao: Science 321 (2008) 101.
- J. P. Novak, E. S. Snow, E. J. Houser, D. Park, J. L. Stepnowski, and R. A. McGill:
Appl. Phys. Lett. 83 (2003) 4026[AIP Scitation].
- Z. C. Wu, Z. H. Chen, X. Du, J. M. Logan, J. Sippel, M. Nikolou, K. Kamaras, J. R. Reynolds, D. B. Tanner, A. F. Hebard, and A. G. Rinzler: Science 305 (2004) 1273[Science].
- T. Takenobu, N. Miura, S. Y. Lu, H. Okimoto, T. Asano, M. Shiraishi, and Y. Iwasa:
Appl. Phys. Express 2 (2009) 025005[JSAP].
- H. Okimoto, T. Takenobu, K. Yanagi, Y. Miyata, H. Kataura, T. Asano, and Y. Iwasa:
Jpn. J. Appl. Phys. 48 (2009) 06FF03[JSAP].
- H. Okimoto, T. Takenobu, K. Yanagi, Y. Miyata, H. Kataura, and Y. Iwasa: in preparation.
- J. H. Cho, J. Lee, Y. Xia, B. Kim, Y. Y. He, M. J. Renn, T. P. Lodge, and C. D. Frisbie:
Nat. Mater. 7 (2008) 900[CrossRef].
- H. T. Yuan, H. Shimotani, A. Tsukazaki, A. Ohtomo, M. Kawasaki, and Y. Iwasa: Adv. Funct. Mater. 19 (2009) 1046.
- T. Ozel, A. Gaur, J. A. Rogers, and M. Shim:
Nano Lett. 5 (2005) 905[CrossRef].
- W. Kim, A. Javey, O. Vermesh, O. Wang, Y. M. Li, and H. J. Dai:
Nano Lett. 3 (2003) 193[CrossRef].
- K. Tsukagoshi, M. Sekiguchi, Y. Ayagi, T. Kanbara, T. Takenobu, and Y. Iwasa:
Jpn. J. Appl. Phys. 46 (2007) L571[JSAP].