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Low-Voltage Operation of Ink-Jet-Printed Single-Walled Carbon Nanotube Thin Film Transistors

Haruya Okimoto, Taishi Takenobu, Kazuhiro Yanagi1,2, Hizekazu Shimotani, Yasumitsu Miyata1, Hiromichi Kataura1,2, and Yoshihiro Iwasa

Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
1Nanotechnology Research Institute, Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
2Japan Science and Technology Agency (JST), CREST, Kawaguchi, Saitama 330-0012, Japan

(Received July 24, 2009; revised August 18, 2009; accepted August 24, 2009; published online February 22, 2010)

We demonstrate a low-voltage and less hysteresis operation of single-walled carbon nanotube thin film transistors (SWCNT-TFTs) using an ionic liquid gate dielectric layer. We fabricated the density controlled SWCNT-TFTs using the inkjet printing technique, where both source/drain electrodes and the semiconducting transistor channel were made from SWCNT films. As the gate dielectric, we have adopted a printable ionic liquid for future all-printable processes and achieved marked improvements in operating voltages and hysteretic response.

DOI: 10.1143/JJAP.49.02BD09

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