Jpn. J. Appl. Phys. 49 (2010) 046504 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors

Dagmar Gregušová, Štefan Gaži, Zdeněk Sofer1, Roman Stoklas, Edmund Dobročka, Martin Mikulics2, Ján Greguš3, Jozef Novák, and Peter Kordoš

Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia
1Department of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, 166 28 Prague 6, Czech Republic
2Institute of Bio- and Nanosystems, Jülich–Aachen Research Alliance (JARA), Research Centre Jülich, D-52425 Jülich, Germany
3Department of Solid-State Physics, Faculty of Mathematics, Physics and Informatics Comenius University, SK-84248 Bratislava, Slovakia

(Received November 2, 2009; accepted January 24, 2010; published online April 20, 2010)

We report on the technology of a very thin oxidized Al sputtered film used for gate insulation and passivation in Al2O3/AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOSHFETs). Their transport properties are presented. The MOSHFET with the Al2O3 layer had improved static output and transfer characteristics compared with the reference heterostructure field-effect transistors (HFETs): (1) their saturation drain current IDS was ∼600 mA mm-1 at gate voltage VG=1 V (HFETs with 2.5 µm gates had ∼430 mA mm-1); (2) their transconductance was 116–140 mS mm-1 (HFETs had ∼70 mS mm-1).

DOI: 10.1143/JJAP.49.046504

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