Jpn. J. Appl. Phys. 49 (2010) 04DA02 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation

Kazuya Matsumoto, Seiichiro Higashi, Hideki Murakami, and Seiichi Miyazaki

(Received October 6, 2009; accepted December 11, 2009; published online April 20, 2010)

We have investigated effects of annealing temperature and heating and cooling rates during millisecond annealing on the activation of B and As in the Si lattice. In the case of As⁺-implanted samples, efficient dopant activation was observed at a temperature higher than 1000 K, while it was observed at a temperature higher than 1400 K in the case of B-implanted samples. The sheet resistance (R_S) of B-implanted samples monotonically decreases with temperature, and no significant dependence on heating rate (R_h) or cooling rate (R_c) is observed. On the other hand, As⁺-implanted samples show significant dependence of R_S on R_h and R_c. We have performed thermal plasma jet (TPJ) annealing on an As₂⁺-implanted sample, and obtained an ultrashallow junction (USJ) with a junction depth (X_j) of 11.9 nm and a R_S of 1095 Ω/sq. B USJ is also obtained with a X_j of 23.5 nm and a R_S of 392 Ω/sq. Precise control of R_h and R_c in addition to annealing temperature is quite important for achieving highly efficient doping in USJ.

URL: http://jjap.jsap.jp/link?JJAP/49/04DA02/
DOI: 10.1143/JJAP.49.04DA02

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