Jpn. J. Appl. Phys. 49 (2010) 04DB03 (5 pages) |Previous Article| |Next Article| |Table of Contents|
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Nondestructive Warpage Measurements of LSI Chips in a Stacked System in Package by Using High-Energy X-ray Diffraction
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1189, Japan
(Received October 5, 2009; revised November 24, 2009; accepted November 30, 2009; published online April 20, 2010)
We describe high-energy X-ray diffraction to examine the warpage of packaged LSI chips nondestructively. Less absorption of the high-energy X-rays enables us to observe diffracted X-rays through packaging materials and LSI chips. We demonstrate that it is possible to measure the warpage of LSI chips in a stacked system in package (SiP). Although an LSI chip in a single-chip ball grid array (BGA) package simply warps into a convex-down shape, the LSI chips packaged in the BGA package as a stacked SiP warp into the shape of waves. It is inferred from results of our examination that the stress due to a printed circuit board substrate and molding resin affects chip warpage.
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