Jpn. J. Appl. Phys. 49 (2010) 04DM04 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio

Kotaro Mizunuma1, Shoji Ikeda1, Hiroyuki Yamamoto1,2, Hua Dong Gan1, Katsuya Miura1,2, Haruhiro Hasegawa1, Jun Hayakawa2, Kenchi Ito2, Fumihiro Matsukura1, and Hideo Ohno1

1Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
2Advanced Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

(Received October 5, 2009; accepted December 25, 2009; published online April 20, 2010)

The effect of Co20Fe60B20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co90Fe10/Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB layer, reached 43% at 1.77 W/cm2 in MTJs with a 1.8-nm-thick CoFeB layer inserted on both sides of the MgO barrier. With increasing CoFeB layer thickness, the optimal annealing temperature (Ta) realizing the maximum TMR ratio increased along with the TMR ratio. The MTJs with 3.0-nm-thick CoFeB deposited at 1.77 W/cm2 showed a TMR ratio of 91% at Ta = 250 °C, where the perpendicular magnetic anisotropy is maintained.

URL: http://jjap.jsap.jp/link?JJAP/49/04DM04/
DOI: 10.1143/JJAP.49.04DM04


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