Jpn. J. Appl. Phys. 49 (2010) 06GJ06 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Growth Mechanisms and Characteristics of ZnO Nanostructures Doped with In and Ga

Su-Hua Yang, Sheng-Yu Hong, and Cheng-Hsun Tsai

(Received November 27, 2009; accepted January 17, 2010; published online June 21, 2010)

In this paper we present the crystallization, photoluminescence (PL), and field-emission (FE) properties of ZnO nanostructures doped with In and Ga cationic substituents and grown by the vapor-phase transport process. During the growth, Zn/ZnO_x was adsorbed on the surface of Ag nanograins and self-catalyzed to form ZnO nanoparticles. Hexagonal-faced nanobricks and nanorods were grown by increasing the ZnO vapor concentration. However, nanodisks rather than nanobricks were grown when In₂O₃ was doped. Furthermore, the nanodisks aggregated to form nanoballs when the synthesis was carried out at high In₂O₃ doping concentrations. In contrast, nanostructures with a sea-urchin-like morphology were grown when Ga₂O₃ was doped; individual nanorods with a screw-dislocation structure grew from the same root. We present the growth mechanisms for the ZnO, ZnO:In, and ZnO:Ga nanostructures. ZnO:Ga nanorods exhibited better PL intensity and FE properties than ZnO nanorods and ZnO:In nanoballs.

URL: http://jjap.jsap.jp/link?JJAP/49/06GJ06/
DOI: 10.1143/JJAP.49.06GJ06

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