Jpn. J. Appl. Phys. 49 (2010) 071603 (8 pages)  |Previous Article| |Next Article|  |Table of Contents|
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The Charge Transport in Organic Field-Effect Transistor as an Interface Charge Propagation: The Maxwell–Wagner Effect Model and Transmission Line Approximation

Martin Weis, Jack Lin, Dai Taguchi, Takaaki Manaka, and Mitsumasa Iwamoto

(Received February 27, 2010; revised March 28, 2010; accepted April 13, 2010; published online July 20, 2010)

By analyzing electric field migration in the pentacene organic field-effect transistor channel (OFET), visualized using the time-resolved microscopic optical second harmonic generation (TRM-SHG) is analyzed the propagation of injected carriers. We find that the accumulated charge propagation on the pentacene–gate insulator interface of the three-electrode system is clearly different from the drift in electric field of the two-electrode system. The propagation of injected carriers is evaluated on the basis of the Maxwell–Wagner effect model and the transmission line approximation. We show that the interface charge accumulation has a significant contribution to the charge transport in OFET. Proposed model for the transient state is beyond the limits of common used impedance spectroscopy models and represents extension of the small-signal analysis. Found relation between mobility and transit time helps in analysis of OFET transit time sensitive experiments such as the time-of-flight technique (TOF) or TRM-SHG.

URL: http://jjap.jsap.jp/link?JJAP/49/071603/
DOI: 10.1143/JJAP.49.071603

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