Jpn. J. Appl. Phys. 49 (2010) 102103 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Formation of TiO₂ Nano Pattern on GaN-Based Light-Emitting Diodes for Light Extraction Efficiency

Joong-Yeon Cho, Kyeong-Jae Byeon, Hyoungwon Park, Hyeong-Seok Kim¹, and Heon Lee

(Received May 17, 2010; accepted July 28, 2010; published online October 20, 2010)

A TiO₂ nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO₂ nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO₂ nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO₂ nano-structure. No electrical degradation was observed for the patterned LED device.

URL: http://jjap.jsap.jp/link?JJAP/49/102103/
DOI: 10.1143/JJAP.49.102103

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