Jpn. J. Appl. Phys. 49 (2010) 105502 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates

Yasushi Takano, Kazunobu Kobayashi, Taiju Uranishi, and Shunro Fuke

(Received April 19, 2010; accepted July 6, 2010; published online October 20, 2010)

We investigated InGaAs layers with InGaAs graded layers on GaAs layers that had been grown on Si substrates using metalorganic vapor phase epitaxy. Cross-sectional transmission electron microscopy revealed that dislocations propagating from the GaAs layer were bent in the graded layer, thereby reducing the density of threading dislocations (TDs) in the InGaAs layer. Thermal cyclic annealing (TCA) was performed for GaAs layers. The TD density in the InGaAs layer decreased with decreasing TD density in the GaAs layer. The combination of an InGaAs graded layer with TCA of the GaAs layer was effective for reducing the TD density of the InGaAs cap layer. The respective TD densities of In_0.095Ga_0.905As and In_0.22Ga_0.78As layers with InGaAs graded layers were 1.3×10⁶ and 4.4×10⁶ cm^-2 when TCA was performed four times at 850 °C for GaAs layers.

URL: http://jjap.jsap.jp/link?JJAP/49/105502/
DOI: 10.1143/JJAP.49.105502

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