Jpn. J. Appl. Phys. 49 (2010) 106504 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Nanoscale Selective Plasma Etching of Ultrathin HfO₂ Layers on GaAs for Advanced Complementary Metal–Oxide–Semiconductor Devices

Jose Anguita, Marcos Benedicto¹, Raquel Alvaro, Beatriz Galiana¹, and Paloma Tejedor¹

(Received April 26, 2010; revised July 22, 2010; accepted July 27, 2010; published online October 20, 2010)

We present a reliable dry-etch process for patterning deep-submicron structures in ultrathin (16 nm) HfO₂ layers deposited on GaAs substrates. Plasma chemistries based on BCl₃/O₂ and SF₆/Ar have been investigated using an inductively-coupled plasma reactive ion etch (ICP-RIE) reactor. The process reliability has been examined in terms of etch rate selectivity, etch time control, anisotropy, and surface roughness of the underlying GaAs substrate for potential application to gate nanopatterning in next-generation field-effect transistor fabrication. We show that a SF₆/Ar plasma process provides excellent prospects as a nanopatterning method for subsequent re-growth of GaAs in novel device architectures.

URL: http://jjap.jsap.jp/link?JJAP/49/106504/
DOI: 10.1143/JJAP.49.106504

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