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Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes

Ting-Wei Kuo, Shi-Xiong Lin, Pin-Kun Hung, Kwok-Keung Chong1, Chen-I Hung2, and Mau-Phon Houng

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, R.O.C.
1Department of Microelectronics Engineering, National Kaohsiung Marine University, Kaoshiung 811, Taiwan, R.O.C.
2Department of Mechanical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, R.O.C.

(Received May 27, 2010; revised July 2, 2010; accepted August 6, 2010; published online November 22, 2010)

By inductively coupled plasma (ICP) etching, a selective high barrier region (SHBR) was fabricated below the p-pad metal electrode for modifying the injection current distribution on p-type GaN of GaN-based light-emitting diodes (LEDs). Through the analysis of current noise power spectra, the samples with ICP etching treatment have excess nitrogen vacancies at the selectively etched surface of p-type GaN; thus, they have a lower hole concentration than the as-grown sample, resulting in a larger barrier height for carrier transport. With this SHBR, the light-output power for the LED chip measured at 20 mA was significantly increased by 12% as compared with that for the conventional LED chip. The light-output power increase could be attributed to a relative reduction in optical power absorption under the p-pad electrode and a higher density of current effectively injected into the active layer of the LED by the SHBR structure.

URL: http://jjap.jsap.jp/link?JJAP/49/116504/
DOI: 10.1143/JJAP.49.116504


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