Jpn. J. Appl. Phys. 5 (1966) pp. 588-592  |Next Article|  |Table of Contents|
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Thermodynamics of Vapor Growth of ZnSe-Ge-I2 System in Closed Tube Process

Tetsuya Arizumi, Tatau Nishinaga and Masahiro Kakehi

Department of Electronics, Faculty of Engineering Nagoya University

(Received January 6, 1966)

The transport phenomena of ZnSe-Ge-I2 system in the closed tube process are thermodynamically investigated by means of the general transport equations presented in a previous paper.1) Calculations show that the nature of the transport reaction is mainly governed by the density of charged iodine. If the density is low enough, the main reaction is the thermal decomposition of ZnSe, while if it is high enough, the reaction is governed by the disproportionation reaction between GeI2 and GeI4. During the growth process a considerable amount of Ge is etched away by iodine vapor.

URL: http://jjap.jsap.jp/link?JJAP/5/588/
DOI: 10.1143/JJAP.5.588


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References | Citing Articles (14)

  1. T. Arizumi and T. Nishinaga: Jpn. J. Appl. Phys. 4 (1965) 165[JSAP].
  2. T. Arizumi and T. Nishinaga: Jpn. J. Appl. Phys. 5 (1966) 21[JSAP].
  3. T. Yamato: Oyo Buturi 34 (1965) 281.
  4. R. F. Lever: J. Electrochem. Soc. 110 (1963) 775.
  5. W. J. Wösten and M. G. Geers: J. Phys. Chem. 66 (1962) 1252[CrossRef].
  6. L. L. Quill: The Chemistry and Metallurgy of Miscellaneous Materials, Thermodynamics, (McGraw-Hill Bock Co., Inc., New York 1950).
  7. G. Preuner und I. Brockmöller: Z. Phys. Chem. 81 (1913) 129.
  8. T. Yamato: private communication.
  9. T. O. Sedgwick and B. J. Agule: J. Electrochem. Soc. 113 (1966) 54.

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