Jpn. J. Appl. Phys. 5 (1966) pp. 588-592  |Table of Contents|
|Abstract| |Full Text PDF (448K)| |Buy This Article|

Thermodynamics of Vapor Growth of ZnSe-Ge-I2 System in Closed Tube Process

Tetsuya Arizumi, Tatau Nishinaga and Masahiro Kakehi

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

  1. Crystal Research and Technology 45 (2010) 791
    Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I2
    A. Stanculescu
  2. Journal of Applied Physics 84 (1998) 589
    Temperature distribution and transport mode in a close-spaced vapor transport reactor for CuInSe2 depositions
    K. Guenoun, K. Djessas, and G. Masse?
  3. Thin Solid Films 237 (1994) 129
    Thermodynamical study of the preparation of CuInSe2 thin films in vertical closed tube systems
    G. Massé and K. Djessas
  4. Thin Solid Films 232 (1993) 194
    Characterization of Cu(Ga, In)Se2 thin films and heterojunctions grown by close-spaced vapour transport
    K. Djessas and G. Massé
  5. Thin Solid Films 226 (1993) 254
    Close-spaced vapour transport of CuInSe2, CuGaSe2, CuGaSe2 and Cu(Ga, In) Se2
    G. Masse and K. Djessas
  6. physica status solidi (a) 139 (1993) K45
    Thermal effects in CuInTe2/CdS/ITO heterojunctions
    G. Massé and K. Djessas
  7. Japanese Journal of Applied Physics 18 (1979) 1909
    Chemical Vapor Growth of ZnTe on GaAs by the Closed-Tube Method
    Mitsuhiro Nishio, Kazuo Tsuru and Hiroshi Ogawa
  8. Revue de Physique Appliquée 13 (1978) 745
    Growth of CuInS2 and its characterization
    H.L. Hwang, C.Y. Sun, C.Y. Leu, C.L. Cheng, and C.C. Tu
  9. Materials Research Bulletin 7 (1972) 1485
    Hetero-epitaxy of ZnSe on GaAs by hydrogen transport
    J. Chevrier, D. Etienne, J. Camassel, D. Auvergne, J.C. Pons, H. Mathieu, and G. Bougnot
  10. physica status solidi (a) 13 (1972) 95
    Epitaxial growth of CdTe on CdS substrates
    C. Paorici, C. Pelosi, and G. Zuccalli
  11. physica status solidi (a) 12 (1972) 399
    Growth and habit of GaS single crystals obtained from the vapour phase
    R. M. A. Lieth
  12. physica status solidi (b) 28 (1968) 295
    The Growth and Electrical Characteristics of Epitaxial Layers of Zinc Selenide on p-Type Germanium
    J. T. Calow, S. J. T. Owen, and P. W. Webb
  13. Journal of Materials Science 2 (1967) 88
    A review of semiconductor heterojunctions
    J. T. Calow, P. J. Deasley, S. J. T. Owen, and P. W. Webb
  14. Japanese Journal of Applied Physics 5 (1966) 1204
    Kinetics of the Vapor Growth of II-VI Compounds Crystals
    Masaharu Toyama


[ARCHIVE] [SEARCH] [REGISTRATION] [JJAP HOME] [JSAP HOME]
Copyright ©2011 The Japan Society of Applied Physics
Contact information