Jpn. J. Appl. Phys. 5 (1966) pp. 593-602  |Next Article|  |Table of Contents|
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Preparation and Electrical Properties of Bi₂Te₃-Ge Alloys

Hiroshi Tamura

(Received March 30, 1966)

The phase diagram for the Bi₂Te₃-Ge system in the region of 0–6 atomic percent Ge was determined by thermal analysis, X-ray diffraction, and the study of crystal growth. The solubility limit of Ge in solid Bi₂Te₃ was found to be about 0.3%, and the distribution coefficient to be about 0.1. Crystals containing various amounts of Ge up to the solubility limit were prepared by the Bridgman method. The electrical properties of Bi₂Te₃ are not much affected by the addition of Ge, and hence Ge is regarded as practically inactive in Bi₂Te₃. The secondary solid solution of the Bi₂Te₃-Ge system, which contains more than 1.2% Ge, is an n-type semiconductor with a very high carrier concentration (of the order of 10²⁰cm^-3). The crystal growth study shows that most of Ge-doped specimens used in Bergmann's works were highly inhomogeneous.

URL: http://jjap.jsap.jp/link?JJAP/5/593/
DOI: 10.1143/JJAP.5.593

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