Jpn. J. Appl. Phys. 5 (1966) pp. 593-602 |Next Article| |Table of Contents|
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Preparation and Electrical Properties of Bi2Te3-Ge Alloys
Central Research Laboratory, Hitachi Ltd.
(Received March 30, 1966)
The phase diagram for the Bi2Te3-Ge system in the region of 0–6 atomic percent Ge was determined by thermal analysis, X-ray diffraction, and the study of crystal growth. The solubility limit of Ge in solid Bi2Te3 was found to be about 0.3%, and the distribution coefficient to be about 0.1. Crystals containing various amounts of Ge up to the solubility limit were prepared by the Bridgman method. The electrical properties of Bi2Te3 are not much affected by the addition of Ge, and hence Ge is regarded as practically inactive in Bi2Te3. The secondary solid solution of the Bi2Te3-Ge system, which contains more than 1.2% Ge, is an n-type semiconductor with a very high carrier concentration (of the order of 1020cm-3). The crystal growth study shows that most of Ge-doped specimens used in Bergmann's works were highly inhomogeneous.
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