Jpn. J. Appl. Phys. 5 (1966) pp. 737-738  |Next Article|  |Table of Contents|
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Short Note

Formation of SiO2 Films by Oxygen-Ion Bombardment

Masanori Watanabe and Atsutomo Tooi

Central Research Laboratory Matsushita Electric Industrial Co., Ltd.

(Received March 28, 1966)

URL: http://jjap.jsap.jp/link?JJAP/5/737/
DOI: 10.1143/JJAP.5.737


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References | Citing Articles (37)

  1. L. E. Howarth and W. G. Spitzer: J. Am. Ceram. Soc. 44 (1961) 1; 44 (1961) 26.
  2. Research Triangle Institute: Integrated Silicon Device Technology, ASD-TDR-63-316 7 (Jun. 1965).
  3. A. S. Grove, B. E. Deal, E. H. Snow and C. T. Sah: Solid-State Electron. 8 (1965) 145.

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