Jpn. J. Appl. Phys. 5 (1966) pp. 837-838  |Table of Contents|
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Transient Phenomena in the Capacitance of GaAs Schottky Barrier Diodes

Yoshitaka Furukawa and Yoshio Ishibashi

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

  1. Physical Review B 25 (1982) 5321
    Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
    J. Cohen and David Lang
  2. Applied Physics Letters 33 (1978) 259
    New technique for identification of deep-level trap emission to indirect conduction minima in GaAs
    A. Majerfeld and P. K. Bhattacharya
  3. Applied Physics 8 (1975) 15
    A study of electron traps in vapour-phase epitaxial GaAs
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  4. Journal of Applied Physics 46 (1975) 2155
    Spectral distribution of photoionization cross sections by photoconductivity measurements
    H. G. Grimmeiss and L-A?. Ledebo
  5. Japanese Journal of Applied Physics 9 (1970) 638
    Deep Energy Levels in the High Resistance Region at GaAs Vapor Epitaxial Film-Substrate Interface
    Fumio Hasegawa
  6. Japanese Journal of Applied Physics 6 (1967) 13
    Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier Diode
    Yoshitaka Furukawa and Yoshio Ishibashi
  7. Japanese Journal of Applied Physics 6 (1967) 413
    Trap Density in Epitaxially Grown GaAs
    Yoshitaka Furukawa, Kenji Kajiyama, Yasuo Seki and Kazuhiko Sugane
  8. Japanese Journal of Applied Physics 6 (1967) 503
    Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes
    Yoshitaka Furukawa and Yoshio Ishibashi
  9. Japanese Journal of Applied Physics 6 (1967) 675
    Trap Levels in Gallium Arsenide
    Yoshitaka Furukawa


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