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Jpn. J. Appl. Phys. 50 (2011) 010105 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Selected Topics in Applied Physics

Technology Evolution for Silicon Nano-Electronics

Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal–Organic Source

Mitsuru Takenaka1,2, Kiyohito Morii1, Masakazu Sugiyama1, Yoshiaki Nakano1, and Shinichi Takagi1

1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
2PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

(Received July 27, 2010; accepted October 7, 2010; published online January 20, 2011)

The gas phase doping of arsenic (As) into (100), (110), and (111) germanium (Ge) substrates at 500 to 700 °C using a metal–organic vapor phase epitaxy (MOVPE) system with tertiarybutylarsine (TBAs) as the As source was investigated for the n-type source/drain formation of Ge metal–oxide–semiconductor field effect transistors (MOSFETs). The surface concentration of As analyzed by secondary ion mass spectroscopy (SIMS) was approximately 1×1019 cm-3 and the diffusion constant was one order of magnitude smaller than that of As induced by ion implantation at 700 °C. The diffusion constant was linearly dependent on the As concentration, and the activation energy and pre-exponential factor of the As diffusion constant were found to be 1.9 eV and 6.2×10-3 cm2/s, respectively. The electron carrier concentration profiles were also evaluated by spreading resistance profiling (SRP) to confirm dopant activation.

URL: http://jjap.jsap.jp/link?JJAP/50/010105/
DOI: 10.1143/JJAP.50.010105
PACS: 81.15.Kk, 85.30.Tv, 73.61.Cw, 61.72.uf, 72.80.Cw


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