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Jpn. J. Appl. Phys. 50 (2011) 010106 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Selected Topics in Applied Physics

Technology Evolution for Silicon Nano-Electronics

Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric

Katsuhiro Kutsuki1, Iori Hideshima1, Gaku Okamoto1, Takuji Hosoi1,2, Takayoshi Shimura1, and Heiji Watanabe1,2

1Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
2Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

(Received July 31, 2010; accepted October 1, 2010; published online January 20, 2011)

Robustness of ultrathin germanium oxynitrides (GeON) formed by plasma nitridation of thermal oxides (GeO2) on Ge(100) substrates [K. Kutsuki et al.: Appl. Phys. Lett. 95 (2009) 022102] was investigated by means of physical and electrical measurements. The decomposition temperature of a 3.7-nm-thick GeON layer was found to increase up to 550 °C by plasma nitridation, which was about 100 °C higher than that of pure GeO2. While the insulating property of GeON dielectrics begins to degrade just below the decomposition temperature, i.e., at around 540 °C, thermal treatment up to 520 °C effectively improves the electrical properties of the ultrathin GeON dielectrics, such as recovery of bulk defects and quite low interface state density (Dit) even for the ultrathin gate dielectrics. The advantage of GeON dielectrics in designing a fabrication process for Ge-based devices and the physical origins of the improved properties will be discussed.

URL: http://jjap.jsap.jp/link?JJAP/50/010106/
DOI: 10.1143/JJAP.50.010106
PACS: 77.55.-g, 81.65.Lp, 52.77.-j, 71.20.Ps, 73.61.Ng


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