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High Current-Gain Cutoff Frequencies above 10 MHz in n-Channel C₆₀ and p-Channel Pentacene Thin-Film Transistors

Masatoshi Kitamura¹ and Yasuhiko Arakawa^1,2

(Received June 25, 2010; revised July 13, 2010; accepted July 15, 2010; published online January 20, 2011)

The current-gain cutoff frequencies for bottom contact n-channel C₆₀ and p-channel pentacene thin-film transistors (TFTs) with channel lengths of 2–10 µm have been investigated. The cutoff frequency was estimated by direct measurement of the gate and drain modulation currents. The measured cutoff frequencies for both C₆₀ and pentacene TFTs increase consistently with reducing channel length. Cutoff frequencies of 27.7 and 11.4 MHz were obtained from C₆₀ and pentacene TFTs with a channel length of 2 µm, respectively.

URL: http://jjap.jsap.jp/link?JJAP/50/01BC01/
DOI: 10.1143/JJAP.50.01BC01
PACS: 85.30.Tv, 73.61.Ph, 73.61.Wp, 85.65.+h

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