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Enhanced Charge Mobility in Polymer Nanocomposites Incorporating Donor–Acceptor Interfaces
Alexey R. Tameev,
Vladimir R. Nikitenko1, and
Anatoly V. Vannikov
A. N. Frumkin Institute of Physical Chemistry and Electrochemistry of the Russian Academy of Sciences, 31, Leninsky prosp., Moscow 119991, Russia
1National Research Nuclear University “MEPhI”, 31, Kashirskoe sh., Moscow 115409, Russia
(Received July 2, 2010; revised August 16, 2010; accepted August 20, 2010; published online January 20, 2011)
Charge carrier transport in donor–acceptor (D–A) composites based on either poly(N-vinyl carbazole) or polyimide derivative incorporating either carbon single-walled nanotubes or nanocrystals of J-aggregated cyanine dyes is shown to exhibit a similar behavior. In the composite films, polymer/nanomaterial interface provides pathways of the high conductivity. Charge–transfer states (CTS) formed at the D–A interface are involved in the transport. The charge transport along the interface is suggested to arise due to the D–A integer charge transfer and strong interaction between adjacent opposite charges located on the donor and acceptor molecules. The approach based on the concept of sequence of charge carrier transfers through charge transfer states describes the increased electron and hole mobility in the composites. The approach predicts enhanced conductivity with reduced activation energy. Moreover, once the density of electron–hole pairs at the interface is rather high, significant part of the charge carriers can avoid hopping transport resulting in conductivity of metal type. The value of two-dimensional conductivity is estimated by numerical modeling.
URL:
http://jjap.jsap.jp/link?JJAP/50/01BJ19/
DOI: 10.1143/JJAP.50.01BJ19
PACS: 81.05.Lg, 61.46.Fg, 73.61.Ph, 73.50.-h, 73.63.Fg
References
- Z. Yao, C. L. Kane, and C. Dekker:
Phys. Rev. Lett. 84 (2000) 2941[APS].
- T. Dürkop, S. A. Getty, E. Cobas, and M. S. Fuhrer:
Nano Lett. 4 (2004) 35[CrossRef].
- H. von Berlepsch, C. Böttcher, and L. Dähne: J. Phys. Chem. B 104 (2000) 8792.
- H. von Berlepsch and C. Böttcher: J. Phys. Chem. B 106 (2002) 3146.
- A. R. Tameev, A. V. Vannikov, and H. F. M. Schoo: Thin Solid Films 451–452 (2004) 109.
- J. Moll, S. Daehne, J. R. Durrant, and D. A. Wiersma:
J. Chem. Phys. 102 (1995) 6362[AIP Scitation].
- V. R. Nikitenko, O. V. Salata, and H. Bässler:
J. Appl. Phys. 92 (2002) 2359[AIP Scitation].
- T. D. Anthopoulos:
Appl. Phys. Lett. 91 (2007) 113513[AIP Scitation].
- T. Sumimoto, Y. Shiratori, M. Iizuka, S. Kuniyoshi, K. Kudo, and K. Tanaka:
Synth. Met. 86 (1997) 2259[CrossRef].
- S. Braun, W. R. Salaneck, and M. Fahlman:
Adv. Mater. 21 (2009) 1450[CrossRef].
- H. Alves, A. S. Molinari, H. Xie, and A. F. Morpurgo: Nat. Mater. 7 (2008) 574.
- T. Sakanoue, T. Irie, and C. Adachi:
J. Appl. Phys. 105 (2009) 114502[AIP Scitation].
- J. H. Kim, A. Watanabe, J. W. Chung, Y. Jung, B.-K. An, H. Tada, and S. Y. Park: J. Mater. Chem. 20 (2010) 1062.
- S. A. Pauli and P. R. Willmott:
J. Phys.: Condens. Matter 20 (2008) 264012[IoP STACKS].
- V. I. Arkhipov, E. V. Emelianova, P. Heremans, and H. Bässler:
Phys. Rev. B 72 (2005) 235202[APS].
- V. R. Nikitenko, A. R. Tameev, A. V. Vannikov, A. N. Lachinov, and H. Bässler:
Appl. Phys. Lett. 92 (2008) 153307[AIP Scitation].
- V. R. Nikitenko, A. R. Tameev, and A. V. Vannikov: Tech. Phys. Lett. 35 (2009) 823.
- V. R. Nikitenko, A. R. Tameev, and A. V. Vannikov: Semiconductors 44 (2010) 211.
- L. Licea-Jimenes, A. D. Grishina, L. Ya. Pereshivko, T. V. Krivenko, V. V. Savelyev, R. W. Rychwalski, and A. V. Vannikov: Carbon 44 (2006) 113.
- A. R. Tameev, A. A. Kozlov, E. I. Mal'tsev, D. A. Lypenko, V. V. Bobinkin, and A. V. Vannikov:
Proc. SPIE 4105 (2001) 443[AIP Scitation].
- E. I. Mal'tsev, D. A. Lypenko, V. V. Bobinkin, B. I. Shapiro, A. R. Tameev, J. Wright, V. I. Berendyaev, B. V. Kotov, and A. V. Vannikov: Mol. Cryst. Liq. Cryst. 361 (2001) 217.
- S. V. Novikov, D. H. Dunlap, V. M. Kenkre, P. E. Parris, and A. V. Vannikov:
Phys. Rev. Lett. 81 (1998) 4472[APS].
- T. Mori:
J. Phys.: Condens. Matter 20 (2008) 184010[IoP STACKS].
- M. C. Petty: Molecular Electronics: From Principles to Practice (Wiley, Chichester, U.K., 2007) p. 103.
- F. I. Vilesov, A. A. Zagrubskii, and D. Z. Garbuzov: Sov. Phys. Solid State 5 (1964) 1460.
- S. Kazaoui, N. Minami, N. Matsuda, H. Kataura, and Y. Achiba:
Appl. Phys. Lett. 78 (2001) 3433[AIP Scitation].
- B. J. Landi, S. L. Castro, H. J. Ruf, C. M. Evans, S. G. Bailey, and R. P. Raffaelle: Sol. Energy Mater. Sol. Cells 87 (2005) 733.
- V. F. Ivanov, O. L. Gribkova, and A. V. Vannikov: Russ. J. Electrochem. 42 (2006) 263.
- H. Bässler: Phys. Status Solidi B 15 (1993) 75.