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Jpn. J. Appl. Phys. 50 (2011) 030201 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Inhomogeneous Barrier Height Analysis of (Ni/Au)–InAlGaN/GaN Schottky Barrier Diode

Nagarajan Subramaniyam, Markku Sopanen, Harri Lipsanen, Chang-Hee Hong1, and Eun-Kyung Suh

Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, 00076 Aalto, Finland
1Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea

(Received December 7, 2010; accepted January 25, 2011; published online March 7, 2011)

The current–voltage (I–V) characteristics of (Ni/Au)–InAlGaN/GaN Schottky barrier diode (SBDs) have been measured in the temperature range of 297 to 473 K. Results have been interpreted based on the assumption of Gaussian distribution (GD) of barrier heights (BH) due to BH inhomogeneities at the interface. A modified Richardson plot gives the modified Schottky barrier height (ΦBO) and Richardson constant A* as 1.41 eV and 26 A cm-2 K-2, respectively. The value of Richardson constant, 26 A cm-2 K-2, is very close to the theoretical value of 29.1 A cm-2 K-2. Therefore, the temperature dependence of the forward I–V characteristics of the (Ni/Au)–InAlGaN/GaN SBDs can be explained based on the thermionic emission mechanism with GD of BHs.

URL: http://jjap.jsap.jp/link?JJAP/50/030201/
DOI: 10.1143/JJAP.50.030201
PACS: 85.30.Hi, 73.30.+y, 85.30.De, 73.61.Ey


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