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Jpn. J. Appl. Phys. 50 (2011) 04DP05 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Theoretical Study on Effect of SiC Crystal Structure on Carrier Transfer in Quantum Dot Solar Cells

Sho Hirose1, Itaru Yamashita1, Ryo Nagumo2, Ryuji Miura1, Ai Suzuki2, Hideyuki Tsuboi1, Nozomu Hatakeyama1, Akira Endou1, Hiromitsu Takaba1, Momoji Kubo4, and Akira Miyamoto2,1,3

1Department of Chemical Engineering, Graduated School of Engineering, Tohoku University, Sendai 980-8579, Japan
2New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
3Department of Applied Chemistry, Graduated School of Engineering, Tohoku University, Sendai 980-8579, Japan
4Fracture and Research Institute, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

(Received September 22, 2010; revised November 4, 2010; accepted November 8, 2010; published online April 20, 2011)

Quantum dot (QD) solar cells are proposed as high-efficiency solar cells. However, their reported conversion efficiencies have been lower than half of the ideal value. To improve their efficiency, the optimization of their cell structure in terms of various parameters, e.g., dot size, interdot distance, type of materials, and QD/bulk interface structure, is necessary. In this paper, we focused on the most important factor for the improvement in the conversion efficiency of Si/SiC type QD solar cells and investigated the effect of the atomistic structure of the QD/bulk interface on carrier transfer by tight-binding simulation. We constructed models of Si/SiC systems and analyzed the effect of QD/bulk interface defects on their electronic structure and carrier transfer properties. It was suggested that electrons trapped at the QD/bulk interface and the type of SiC crystal structure affect electron transfer.

URL: http://jjap.jsap.jp/link?JJAP/50/04DP05/
DOI: 10.1143/JJAP.50.04DP05
PACS: 88.40.-j, 88.40.hj, 81.07.Ta, 85.35.Be, 73.20.Hb, 81.05.Cy, 81.05.Hd


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