Jpn. J. Appl. Phys. 50 (2011) 052102 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium–Tin-Oxide Nanorod by Glancing-Angle Deposition

Min-An Tsai, Hsun-Wen Wang, Peichen Yu¹, Hao-Chung Kuo¹, and Shiuan-Huei Lin

(Received December 25, 2010; accepted January 27, 2011; published online May 20, 2011)

The enhanced light extraction and reduced forward voltage of a GaN-based vertical injection light emitting diode (VI-LED) with an indium–tin-oxide (ITO) nanorod array were demonstrated. The ITO nanorod array was fabricated by the glancing-angle deposition method. The employment of ITO nanostructures amplified not only the broadband transmission but also the current spreading. The optical output power of GaN-based VI-LEDs with ITO nanorods was enhanced by 50% compared with a conventional VI-LED at an injection current of 350 mA. The extraction efficiency was dramatically raised from 62 to 93% by the surface ITO nanorods. We also optimized the extraction efficiency of the GaN-based VI-LED with an ITO nanorod array by tuning the thickness of the n-GaN top layer via three-dimensional finite difference time domain (3D-FDTD) simulation.

URL: http://jjap.jsap.jp/link?JJAP/50/052102/
DOI: 10.1143/JJAP.50.052102
PACS: 85.60.Jb, 81.15.Hi, 85.35.Be, 81.07.St

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