Jpn. J. Appl. Phys. 50 (2011) 06GF12 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Nickel Nanocrystals Embedded in Metal–Alumina–Nitride–Oxide–Silicon Type Low-Temperature Polycrystalline-Silicon Thin-Film Transistor for Low-Voltage Nonvolatile Memory Application

Terry Tai-Jui Wang, Yu-Cheng Liu¹, Chien-Hung Wu², Tien-Lin Lu¹, Ing-Jar Hsieh¹, and Cheng-Tzu Kuo

(Received November 28, 2010; revised February 3, 2011; accepted February 18, 2011; published online June 20, 2011)

In this work, a nickel nanocrystal (Ni-NC) assisted metal–alumina–nitride–oxide–silicon (MANOS) thin-film transistor (TFT) nonvolatile memory (NVM) was fabricated by a standard low temperature polycrystalline silicon (LTPS) TFT process. The size range and density of Ni-NCs were approximately 5–13 nm and 5 ×10¹¹ cm^-2, respectively. The programming/erasing (P/E) voltages are decreased down to -10 and +8 V, respectively, by the Fowler–Nordheim tunneling mechanism from gate injection. In this P/E voltage condition, a large memory window (∼4.2 V) was observed by current–voltage measurement. Then, the speed and voltages of P/E were measured and discussed completely. The data retention of the Ni-NC assisted MANOS-LTPS-TFT-NVM is extracted to be 1.62 V of memory window after 10⁴ s.

URL: http://jjap.jsap.jp/link?JJAP/50/06GF12/
DOI: 10.1143/JJAP.50.06GF12
PACS: 85.30.-z, 85.30.Tv, 73.40.Qv, 73.61.Cw, 73.63.Bd, 73.61.At, 81.15.Gh, 85.30.De

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