Jpn. J. Appl. Phys. 50 (2011) 06GF14 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation

Takahiro Mori, Tetsuji Yasuda, Tatsuro Maeda, Wataru Mizubayashi, Shin-ichi O'uchi, Yongxun Liu, Kunihiro Sakamoto, Meishoku Masahara, and Hiroyuki Ota

(Received November 30, 2010; revised January 20, 2011; accepted January 24, 2011; published online June 20, 2011)

Tunneling field-effect transistors (TFETs) were investigated. To realize the potentially low off-current characteristics of the TFETs, the offset drain structure is preferred. We have proposed an oblique drain implantation process utilizing the shadowing effect to fabricate the offset drain, and the effectiveness was studied by simulation and experiment. Extremely low off-currents of 40 fA/µm for the P-TFET and 15 fA/µm for the N-TFET have been demonstrated experimentally.

URL: http://jjap.jsap.jp/link?JJAP/50/06GF14/
DOI: 10.1143/JJAP.50.06GF14
PACS: 85.30.Tv, 85.30.De, 85.40.Ry, 73.61.Cw

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