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Jpn. J. Appl. Phys. 50 (2011) 070103 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Selected Topics in Applied Physics

Technology, Physics, and Modeling of Graphene Devices

Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate

Ryota Takahashi1, Hiroyuki Handa1, Shunsuke Abe1, Kei Imaizumi1, Hirokazu Fukidome1, Akitaka Yoshigoe2, Yuden Teraoka2, and Maki Suemitsu1,3

1Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
2Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan
3CREST, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan

(Received December 27, 2010; accepted February 1, 2011; published online July 20, 2011)

Epitaxial graphene can be formed on silicon substrates by annealing a 3C-SiC film formed on a silicon substrate in ultrahigh vacuum (G/3C-SiC/Si). In this work, we explore the graphitization process on the 3C-SiC(111)/Si(111) surface by using low-energy electron diffraction and X-ray photoelectron spectroscopy (XPS) and compare them with that on 6H-SiC(0001). Upon annealing at T≥1150 °C, the 3C-SiC(111)/Si(111) surface follows the sequence of (√3×√3)R30°, (6√3×6√3)R30°, and (1×1)graphene in the surface structures. The C 1s core level according to XPS indicates that a buffer layer, identical with that in G/6H-SiC(0001), exists at the G/3C-SiC(111) buffer. These observations strongly suggest that graphitization on the surface of the 3C-SiC(111) face proceeds in a similar manner to that on the Si-terminated hexagonal bulk SiC crystals.

URL: http://jjap.jsap.jp/link?JJAP/50/070103/
DOI: 10.1143/JJAP.50.070103
PACS: 81.05.ue, 81.40.Ef, 81.15.Kk, 82.80.Pv, 79.20.Uv


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