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Jpn. J. Appl. Phys. 50 (2011) 090201 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

Masato Noborio1, Michael Grieb2, Anton J. Bauer2, Dethard Peters3, Peter Friedrichs3, Jun Suda1, and Tsunenobu Kimoto1,4

1Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
2Fraunhofer IISB, 91058 Erlangen, Germany
3SiCED Electronics Development GmbH & Co. KG, 91058 Erlangen, Germany
4Photonics and Electronics Science and Engineering Center (PESEC), Kyoto University, Kyoto 615-8510, Japan

(Received April 10, 2011; accepted June 25, 2011; published online September 5, 2011)

In this paper, we have investigated reliability of n- and p-type 4H-SiC(0001) metal–oxide–semiconductor (MOS) devices with N2O-grown oxides and deposited oxides annealed in N2O. From the results of time-dependent dielectric breakdown (TDDB) tests, it is revealed that the N2O-grown oxides have relatively-high reliability (4–30 C cm-2 for n- and p-MOS structures). In addition, the deposited SiO2 on n- and p-SiC exhibited a high charge-to-breakdown of 70.0 and 54.9 C cm-2, respectively. The n/p-MOS structures with the deposited SiO2 maintained a high charge-to-breakdown of 19.9/15.1 C cm-2 even at 200 °C. The deposited SiO2 annealed in N2O has promise as the gate insulator for n- and p-channel 4H-SiC(0001) MOS devices because of its high charge-to-breakdown and good interface properties.

URL: http://jjap.jsap.jp/link?JJAP/50/090201/
DOI: 10.1143/JJAP.50.090201
PACS: 85.30.Tv, 73.40.Qv, 84.32.Tt, 73.61.Le


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