Jpn. J. Appl. Phys. 50 (2011) 09MD04 (2 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (139K)| |Buy This Article|

Brief Note

Ultra High Density Scanning Electrical Probe Phase-Change Memory for Archival Storage

Lei Wang, C. David Wright1, Purav Shah2, Mustafa M. Aziz1, Abu Sebastian3, Haralampos Pozidis3, and Andrew Pauza4

Nanchang Hangkong University, Nanchang 330063, P. R. China
1University of Exeter, Exeter EX4 4QF, U.K.
2Middlesex University, The Burroughs, London NW4 4BT, U.K.
3IBM Research–Zurich, 8803 Ruschlikon, Switzerland
4Plarion Ltd., Melbourn Science Park, Melbourn, Herts SG8 6HB, U.K.

(Received April 15, 2011; accepted June 27, 2011; published online September 20, 2011)

The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in.2 is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally.

URL: http://jjap.jsap.jp/link?JJAP/50/09MD04/
DOI: 10.1143/JJAP.50.09MD04
KEYWORDS:72.60.+g, 68.55.ag, 84.30.Sk, 85.35.-p
PACS: 72.60.+g, 68.55.ag, 84.30.Sk, 85.35.-p


|Full Text PDF (139K)| |Buy This Article| Citation:


References | Citing Article (1)

  1. P. Vettiger, G. Cross, M. Despont, U. Drechsler, U. Durig, B. Gotsmann, W. Haberle, A. M. Lantz, E. H. Rothuizen, R. Stutz, and K. G. Binnig: IEEE Trans. Nanotechnol. 1 (2002) 39.
  2. C. D. Wright, M. Armand, and M. M. Aziz: IEEE Trans. Nanotechnol. 5 (2006) 50.
  3. C. D. Wright, P. Shah, L. Wang, M. M. Aziz, A. Sebastian, and H. Pozidis: Appl. Phys. Lett. 97 (2010) 173104[AIP Scitation].
  4. S. Gidon, O. Lemonnier, B. Rolland, O. Bichet, and O. Dressler: Appl. Phys. Lett. 85 (2004) 6392[AIP Scitation].
  5. H. Bhaskaran, B. Gotsmann, A. Sebastian, U. Drechsler, A. M. Lantz, M. Despont, P. Jaroenapibal, W. R. Carpick, Y. Chen, and K. Sridharan: Nat. Nanotechnol. 5 (2010) 181.
  6. H. Bhaskaran, A. Sebastian, U. Drechsler, and M. Despont: Nanotechnology 20 (2009) 105701[IoP STACKS].
  7. C. D. Wright, L. Wang, P. Shah, M. M. Aziz, E. Varesi, R. Bez, M. Moroni, and F. Cazzaniga: IEEE Trans. Nanotechnol. 10 (2011) 900.
  8. D. Ielmini and Y. Zhang: J. Appl. Phys. 102 (2007) 054517[AIP Scitation].
  9. J. L. Battaglia, A. Kusiak, V. Schick, A. Cappella, C. Wiemer, M. Longo, and E. Varesi: J. Appl. Phys. 107 (2010) 044314[AIP Scitation].
  10. F. Xiong, A. Liao, and E. Pop: Appl. Phys. Lett. 95 (2009) 243103[AIP Scitation].
  11. H. Lo and A. J. Bain: Proc. MNHT, 2008, p. 1.

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information