Quick Search: Journal  Author  Title/Abstract  Vol./Year 

Jpn. J. Appl. Phys. 50 (2011) 09NC01 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (681K)| |Buy This Article|

Hierarchical Domain Structures in Relaxor 24Pb(In1/2Nb1/2)O3–46Pb(Mg1/3Nb2/3)O3–30PbTiO3 near a Morphotropic Phase Boundary Composition Grown by Bridgman Method

Naohiko Yasuda, Tomohiro Fuwa, Hidehiro Ohwa, Yoshihito Tachi1, Yohachi Yamashita2, Kazuhiko Fujita3, Makoto Iwata4, Hikaru Terauchi5, and Yoshihiro Ishibashi6

Electrical and Electronic Engineering Department, Gifu University, Gifu 501-1193, Japan
1JFE Mineral Co., Ltd., Chiba 260-0826, Japan
2Toshiba Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
3Electronic and Control Engineering Department, Gifu National College of Technology, Gifu 501-0495, Japan
4Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
5Advanced Research Center of Science, School of Science, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
6Department of Physics, School of Science, Kyushu University, Fukuoka 812-8581, Japan

(Received May 24, 2011; accepted June 21, 2011; published online September 20, 2011)

The domain structures of the lead-based relaxor ferroelectric solid solution single crystal, 24Pb(In1/2Nb1/2)O3 (PIN)–46Pb(Mg1/3Nb2/3)O3 (PMN)–30PbTiO3 (PT), near a morphotropic phase boundary (MPB) composition grown by the Bridgeman method were studied by polarized light microscopy (PLM), piezoresponse force microscopy (PFM) and scanning electron microscopy (SEM). The change in domain structures with poling from rhombohedral spindlelike domains of 3–5 µm width to orthorhombic domains of ∼20 µm width with rectangular cells with a size of 3–5 µm, characterized with an antiferroelectic double hysteresis loop in the electric field-induced strain behavior, was found. Such domain structures were microscopically identified from SEM images as small circular tetragonal defects, planar monoclinic defects such as edge and screw dislocations with Burgers vector b along <110>cub and/or <100>cub directions and their agglomerate rectangular orthorhombic defects, also characterized by PFM. Hierarchical domain structures are discussed from the viewpoints of domain structures due to defects such as edge and screw dislocations originating in the chemical order region (COR) and the piezoelectric responses and dielectric properties.

URL: http://jjap.jsap.jp/link?JJAP/50/09NC01/
DOI: 10.1143/JJAP.50.09NC01


|Full Text PDF (681K)| |Buy This Article| Citation:

References | Citing Articles (2)

  1. J. Kuwata, K. Uchino, and S. Nomura: Jpn. J. Appl. Phys. 21 (1982) 1298[JSAP].
  2. S.-E. Park and T. R. Shrout: IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44 (1997) 1140.
  3. N. Setter: Piezoelectric Materials in Devices (Ceramics Laboratory EPFL Swiss Federal Institute of Technology, Lausanne, 2002) Chaps. 1 and 20.
  4. Z.-G. Ye: Handbook of Advanced Dielectric, Piezoelectric and Ferroelectric Materials (CRC Press, Boca Raton, FL, 2008).
  5. B. Noheda, D. E. Cox, G. Shirane, J. Gao, and Z.-G. Ye: Phys. Rev. B 66 (2002) 054104[APS].
  6. A. K. Singh and D. Pandey: Phys. Rev. B 67 (2003) 064102[APS].
  7. J. M. Kiat, Y. Uesu, B. Dkhil, M. Matsuda, C. Malibert, and G. Calvarin: Phys. Rev. B 65 (2002) 064106[APS].
  8. G. Xu, H. Luo, H. Xu, and Z. Yin: Phys. Rev. B 64 (2001) 020102[APS].
  9. A. A. Bokov and Z.-G. Ye: J. Appl. Phys. 95 (2004) 6347[AIP Scitation].
  10. C. A. Randall and A. S. Bhalla: Jpn. J. Appl. Phys. 29 (1990) 327[JSAP].
  11. J. M. Kiat and B. Dkhil: Handbook of Advanced Dielectric, Piezoelectric and Ferroelectric Materials (CRC Press, Boca Raton, FL, 2008) Chap. 14.
  12. I. P. Swainson, C. Stock, P. M. Gehring, G. Xu, K. Hirota, Y. Qiu, H. Luo, X. Zhao, J. F. Li, and D. Viehland: Phys. Rev. B 79 (2009) 224301[APS].
  13. N. Yasuda, H. Ohwa, J. Ohashi, K. Nomura, H. Terauchi, M. Iwata, and Y. Ishibashi: J. Phys. Soc. Jpn. 67 (1998) 3952.
  14. G. Xu, Z. Zhong, Y. Bing, Z.-G. Ye, C. Stock, and G. Shirane: Phys. Rev. B 70 (2004) 064107[APS].
  15. G. Shirane, J. D. Axe, J. Harada, and J. P. Remeika: Phys. Rev. B 2 (1970) 155[APS].
  16. Y. M. Jin, Y. U. Wang, A. G. Khachaturyan, J. F. Li, and D. Viehland: J. Appl. Phys. 94 (2003) 3629[AIP Scitation].
  17. H. Wang, J. Zhu, N. Lu, A. A. Bokov, Z.-G. Ye, and X. W. Zhang: Appl. Phys. Lett. 89 (2006) 042908[AIP Scitation].
  18. L. E. Cross: Ferroelectrics 76 (1987) 241.
  19. G. A. Samara: J. Phys.: Condens. Matter 15 (2003) R367[IoP STACKS].
  20. W. Kleemann: J. Mater. Sci. 41 (2006) 129[CrossRef].
  21. I. K. Bdikin, V. V. Shvartsman, and A. L. Kholkin: Appl. Phys. Lett. 83 (2003) 4232[AIP Scitation].
  22. V. V. Shvartsman and A. L. Kholkin: Phys. Rev. B 69 (2004) 014102[APS].
  23. M. Matsushita, Y. Tachi, and K. Echizenya: Abstr. American Ceramic Society 103rd Annu. Meet., 2001, p. 247.
  24. Y. Tachi and M. Matsushita: J. Min. Mater. Process Inst. Jpn. 125 (2009) 259.
  25. S. Zhang, J. Luo, W. Hackenberger, and T. R. Shrout: J. Appl. Phys. 104 (2008) 064106[AIP Scitation].
  26. N. Yasuda, M. Sakaguchi, Y. Itoh, H. Ohwa, Y. Yamashita, M. Iwata, and Y. Ishibashi: Jpn. J. Appl. Phys. 42 (2003) 6205[JSAP].
  27. Md. M. Rahman and N. Yasuda: Solid State Commun. 149 (2009) 630[CrossRef].
  28. N. Yasuda, K. Ozawa, Md. M. Rahman, H. Ohwa, Y. Yamashita, M. Iwata, and Y. Ishibashi: Jpn. J. Appl. Phys. 47 (2008) 7650[JSAP].
  29. K. Uchino: Solid State Ionics 108 (1998) 43.
  30. F. Bai, J. Li, and D. Viehland: J. Appl. Phys. 97 (2005) 054103[AIP Scitation].
  31. A. Khachaturyan, S. M. Shapiro, and S. Semenovskaya: Phys. Rev. B 43 (1991) 10832[APS].
  32. Y. M. Jin, Y. U. Wang, A. Khachaturyan, J. F. Li, and D. Viehland: J. Appl. Phys. 94 (2003) 3629[AIP Scitation].
  33. J. Kreisel, P. Bouvier, B. Dkhil, P. A. Thomas, A. M. Glazer, T. R. Welberry, B. Chaabane, and M. Mezouar: Phys. Rev. B 68 (2003) 014113[APS].
  34. J. F. Scott and M. Dawber: Appl. Phys. Lett. 76 (2000) 3801[AIP Scitation].
  35. C. Kittel: Introduction to Solid State Physics (Wiley, New York, 1996) 7th ed., Chap. 20.
  36. N. Yasuda, S. Otsuka, H. Ohwa, K. Fujita, M. Iwata, H. Terauchi, and Y. Ishibashi: to be published in Ferroelectrics 415 (2011).
  37. D. Viehland: J. Appl. Phys. 88 (2000) 4794[AIP Scitation].
  38. J. Tian, P. Han, X. Huang, H. Pan, J. F. Carroll, and D. Payne: Appl. Phys. Lett. 91 (2007) 222903[AIP Scitation].
  39. S. F. Liu, S. E. Park, L. E. Cross, and T. R. Shrout: J. Appl. Phys. 92 (2002) 461[AIP Scitation].
  40. K. Ohwada, K. Hirota, P. W. Rehrig, Y. Fujii, and G. Shirane: Phys. Rev. B 67 (2003) 094111[APS].
|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information