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X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide

Akio Ohta, Tomohiro Fujioka, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki¹

(Received February 10, 2011; revised June 25, 2011; accepted June 30, 2011; published online October 20, 2011)

After evaporation of four different metal films (Al, Ti, Ni, and Au) on thermally-grown Ge oxide/Ge(100), the chemical bonding features in the region near the metal/oxide interfaces were investigated by high-resolution X-ray photoelectron spectroscopy (XPS). From the analysis of core-line spectra, we found that a part of thermally-grown GeO₂ was reduced with Ni, Ti, and Al evaporation. The reduction of GeO₂ layer becomes insignificant in the increasing order of metal oxide formation energy metals as predicted from the calculation of Gibbs free energy change in each metal oxidation. For Al that is mostly reactive with GeO₂, not only the oxygen transfer from GeO₂ to Al, but also the formation of Al–Ge bonds in the region near the Al/GeO₂ interface occurs with Al evaporation on thermally grown GeO₂.

URL: http://jjap.jsap.jp/link?JJAP/50/10PE01/
DOI: 10.1143/JJAP.50.10PE01

References | Citing Articles (5)

1. International Technology Roadmap for Semiconductor 2009 Edition.
2. C. O. Chui, H. Kim, P. C. McIntyre, and K. C. Saraswat: IEDM Tech. Dig., 2003, p. 437.
3. H. Shang, H. Okorn-Schmidt, K. K. Chan, M. Copel, J. A. Ott, P. M. Kozlowski, S. E. Steen, S. A. Cordes, H.-S. P. Wong, E. C. Jones, and W. E. Haensch: IEDM Tech. Dig., 2002, p. 441.
4. H. Murakami, M. Miura, A. Ohta, R. Yougauchi, S. Higashi, and S. Miyazaki: Ext. Abstr. 4th Int. SiGe Technology and Device Meet. (ISTDM), 2008, P1-19, p. 165.
5. H. Nakagawa, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki: Ext. Abstr. 2006 Int. Workshop Dielectric Thin Films for Future ULSI Devices (IWDTF), 2006, p. 13.
6. Y. Kamata, Y. Kamimuta, T. Ino, and A. Nishiyama: Jpn. J. Appl. Phys. 44 (2005) 2323[JSAP].
7. T. Nishimura, K. Kita, and A. Toriumi: Appl. Phys. Express 1 (2008) 051406[JSAP].
8. A. Toriumi, T. Tabata, C. H. Lee, T. Nishimura, K. Kita, and K. Nagashio: Microelecton. Eng. 86 (2009) 1571.
9. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou: Appl. Phys. Lett. 89 (2006) 252110[AIP Scitation].
10. A. Dimoulas and P. Tsipas: Microelectron. Eng. 86 (2009) 1577.
11. T. Nishimura, S. Sakata, K. Nagashio, K. Kita, and A. Toriumi: Appl. Phys. Express 2 (2009) 021202[JSAP].
12. T. Maeda, Y. Morita, and S. Takagi: Appl. Phys. Express 3 (2010) 061301[JSAP].
13. H. Nakagawa, A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki: Abstr. 2nd Int. Workshop New Group IV Semiconductor 2006, p. 63.
14. H. Murakami, T. Fujioka, A. Ohta, T. Bando, S. Higashi, and S. Miyazaki: ECS Trans. 33 [6] (2010) 253.
15. A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, and S. Miyazaki: e-J. Surf. Sci. Nanotechnol. 4 (2006) 174.
16. K. Prabhakaran and T. Ogino: Surf. Sci. 325 (1995) 263[CrossRef].
17. C. D. Wagner, L. H. Gale, and R. H. Raymond: Anal. Chem. 51 (1979) 466.
18. S. M. Sze: Physics of Semiconductor Devices (Willey, Hoboken, NJ, 1981) 2nd ed., 251.
19. H. B. Michaelson: J. Appl. Phys. 48 (1977) 4729[AIP Scitation].
20. L. Pauling: The Nature of Chemical Bond (Cornell University Press, Ithaka, NY, 1960) 3rd ed.
21. S. Hüfner: Photoelectron Spectroscopy: Principles and Applications (Springer, Heidelberg, 1996).
22. T. Deegan and G. Hughes: Appl. Surf. Sci. 123–124 (1998) 66[CrossRef].
23. F. J. Himpsel, F. R. McFreely, A. Taleb-Ibrahimi, and J. A. Yarmoff: Phys. Rev. B 38 (1988) 6084[APS].
24. S. Tanuma, C. J. Powell, and D. R. Penn: Surf. Interface Anal. 43 (2011) 689.
25. D. D. Wagman, W. H. Evans, V. B. Parker, I. Hallow, S. M. Bailey, and R. H. Schumm: Selected Values of Chemical Thermodynamic Properties, Tables for the First Thirty-Four Elements in the Standard Order of Arrangement (U.S. Government Printing Office, Washinton, D.C., 1968) NBS Technical Note 270-3.
26. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. Bomben: Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer, Eden Prairie, MN, 1992) 2nd ed.
27. F. J. Himpsel, G. Hollinger, and R. A. Pollak: Phys. Rev. B 28 (1983) 7014[APS].
28. S. Miyazaki, J. Schafer, J. Ristein, and L. Ley: Appl. Phys. Lett. 68 (1996) 1247[AIP Scitation].
29. S. Miyazaki, Y. Hazama, and M. Hirose: Optoelectron. Devices Technol. 5 (1990) 81.
30. S. Miyazaki, T. Tamura, M. Ogasawara, H. Itokawa, H. Murakami, and M. Hirose: Appl. Surf. Sci. 159–160 (2000) 75[CrossRef].