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Investigation of Cu-Deficient Copper Gallium Selenide Thin Film as a Photocathode for Photoelectrochemical Water Splitting
Jaehong Kim,
Tsutomu Minegishi,
Jun Kobota, and
Kazunari Domen
Department of Chemical System Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
(Received June 24, 2011; accepted October 30, 2011; published online December 19, 2011)
Polycrystalline thin films of CuGaSe2-related Cu-deficient materials were prepared by vacuum co-evaporation. The composition was adjusted in order to prepare copper gallium selenide, abbreviated as CGSe, with an optimal band gap and valence band maximum position for photoelectrochemical water splitting. The effect of the Ga/Cu ratio on the photoelectrochemical properties of CGSe was also studied. With increasing Ga/Cu ratio, the band gap of CGSe became larger, and the valence band maximum position became deeper against the vacuum level. However, an analysis of the photocurrent and onset potential indicated that the Ga/Cu ratio should be less than 3.5 for optimal performance. A Pt-deposited CGSe electrode with a Ga/Cu ratio of 3 showed an onset potential of about 1.1 V vs RHE and an energy conversion efficiency of 0.35% under AM 1.5G light illumination in a 0.1 M Na2SO4 solution with pH 9.5.
URL:
http://jjap.jsap.jp/link?JJAP/51/015802/
DOI: 10.1143/JJAP.51.015802
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- In two-electrode cell consisting of Pt/CGSe photocathode and RuO2 anode, 0.5 M Na2SO4 aqueous solution with pH 12 was employed as electrolyte. The analysis of gas products was also performed using the cell connected to a closed gas circulation and vacuum system. A small part of circulating gas was collected and analyzed using a gas chromatography (Shimadzu GC-8A, MS-5A, TCD, Ar carrier) during an application of 1 V under AM 1.5G irradiation. The generation rates of H2 and O2 were 12.9 and 6.2 µmol/h, respectively (preparation for publication).