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Jpn. J. Appl. Phys. 51 (2012) 015803 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Transparent Conductive Properties of TiOx and Nb-Doped TiOx Films Produced by Reactive Co-Sputtering from Ti and Nb2O5 Targets

Housei Akazawa

NTT Microsystem Integration Laboratories, Atsugi, Kanagawa 243-0198, Japan

(Received October 3, 2011; accepted November 6, 2011; published online December 27, 2011)

We investigated the structural and transparent conductive properties of oxygen-deficient TiOx films that were deposited by metal-mode reactive electron cyclotron resonance plasma sputtering from a Ti target at 400 °C. Crystallites in a strongly reduced state (x≈1) had face centered cubic (fcc) structures with the resistivities ranging from 10-4 to 10-3 Ω cm, and the optical transmittance in the visible wavelength was between 25 and 55%. In a sufficiently oxidized state (x≈2), rutiles nucleated with resistivites higher than 10-2 Ω cm, and the optical transmittance was between 60 and 80%. The intermediate composition (1< x < 2) corresponded to fcc structures although the crystallinity approached an amorphous state with increasing x. Crystallization into magneli phases (TinO2n-1) was observed only for thick films at deposition temperatures higher than 500 °C. Carriers were n-type for rutile, but p-type for the fcc and magneli phases. Nb-doped TiOx films were produced by metal-mode sputtering of TiOx with co-sputtering Nb and O from an Nb2O5 target. The donor role of Nb5+ could be identified only in the oxidized rutile state, but the resistivity increased at higher Nb2O5 sputtering powers due to oxidation of Nb atoms that substituted Ti sites.

URL: http://jjap.jsap.jp/link?JJAP/51/015803/
DOI: 10.1143/JJAP.51.015803


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