Quick Search: Journal  Author  Title/Abstract  Vol./Year 

Jpn. J. Appl. Phys. 51 (2012) 01AC04 (7 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (708K)| |Buy This Article|

Optical and Electrical Properties of Nitrogen-Doped Diamond-Like Carbon Films Prepared by a Bipolar-Type Plasma-Based Ion Implantation

Setsuo Nakao, Tetsuo Soga1, Tsutomu Sonoda, Tokuhiro Asada1, and Naoki Kishi1

Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
1Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan

(Received April 30, 2011; accepted September 13, 2011; published online January 20, 2012)

Diamond-like carbon (DLC) films are prepared by a bipolar-type plasma-based ion implantation (PBII) technique using toluene and nitrogen gases (N2), and the optical and electrical properties are examined as a function of N2 flow rate. The N concentration in the films and structural changes are also examined by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM), and Raman spectroscopy. It is found that the deposition rate decreases, but N concentration linearly increases with increasing N2 flow rate. Granular surfaces are observed and the grains decreases in size as N2 flow rate increases. In addition, Raman analysis suggests that aromatic ring clusters and the amorphous structure increase in amount. The optical band gap and conductivity increase with increasing N concentration up to about 11 at. %, and then decrease with further increase in N concentration.

URL: http://jjap.jsap.jp/link?JJAP/51/01AC04/
DOI: 10.1143/JJAP.51.01AC04


|Full Text PDF (708K)| |Buy This Article| Citation:

References | Citing Article (1)

  1. Z. Q. Ma and B. X. Liu: Sol. Energy Mater. Sol. Cells 69 (2001) 339.
  2. X. Tian, M. Rusop, Y. Hayashi, T. Soga, T. Jimbo, and M. Umeno: Jpn. J. Appl. Phys. 41 (2002) L970[JSAP].
  3. K. M. Krishna, T. Soga, T. Jimbo, and M. Umeno: Carbon 37 (1999) 531.
  4. J. Q. Wu, X. C. Wang, E. Y. Jiang, and H. L. Bai: Appl. Surf. Sci. 255 (2009) 9498[CrossRef].
  5. M. Guerino, M. Massi, H. S. Maciel, C. Otani, and R. D. Mansano: Microelectron. J. 34 (2003) 639.
  6. A. P. Mousinho and R. D. Mansano: Appl. Surf. Sci. 254 (2007) 189[CrossRef].
  7. M. Umeno and S. Adhikary: Diamond Relat. Mater. 14 (2005) 1973.
  8. M. Rusop, S. Adhikari, A. M. M. Omer, T. Soga, T. Jimbo, and M. Umeno: Diamond Relat. Mater. 15 (2006) 371.
  9. M. Rusop, A. M. M. Omer, S. Adhikari, S. Adhikary, H. Uchida, T. Soga, T. Jimbo, and M. Umeno: Sol. Energy Mater. Sol. Cells 90 (2006) 301.
  10. M. Rusop, H. Ebisu, M. Adachi, T. Soga, and T. Jimbo: Jpn. J. Appl. Phys. 44 (2005) 6124[JSAP].
  11. M. Rusop, S. M. Mominuzzaman, T. Soga, T. Jimbo, and M. Umeno: Jpn. J. Appl. Phys. 42 (2003) 2339[JSAP].
  12. K. M. Krishna, Y. Nukaya, T. Soga, T. Jimbo, and M. Umeno: Sol. Energy Mater. Sol. Cells 65 (2001) 163.
  13. K. M. Krishna, M. Umeno, Y. Nukaya, T. Soga, and T. Jimbo: Appl. Phys. Lett. 77 (2000) 1472[AIP Scitation].
  14. S. Miyagawa, S. Nakao, J. Choi, M. Ikeyama, and Y. Miyagawa: New Diamond Front. Carbon Technol. 16 (2006) 33.
  15. S. Miyagawa, S. Nakao, M. Ikeyama, and Y. Miyagawa: Surf. Coatings Technol. 156 (2002) 322.
  16. J. Tauc: Amorphous and Liquid Semiconductors (Plenum, London, 1974) Chap. 4.
  17. K. Saitoh, H. Niwa, M. Kobayakawa, S. Tanemura, M. Ikeyama, M. Takeda, H. Masuda, Y. Miyagawa, S. Nakamura, S. Miyagawa, and K. Yasuda: Nagoya Kogyo Gijutsu Shikenjo Hokoku 39 (1990) 259 [in Japanese].
  18. L. R. Doolittle: Nucl. Instrum. Methods Phys. Res., Sect. B 9 (1985) 344.
  19. L. R. Doolittle: Nucl. Instrum. Methods Phys. Res., Sect. B 15 (1986) 227.
  20. S. Nakao: Trans. Mater. Res. Soc. Jpn. 35 (2010) 759.
  21. H. Ito, S. Ichimura, K. C. Namiki, and H. Saitoh: Jpn. J. Appl. Phys. 42 (2003) 7116[JSAP].
  22. C. Godet and M. N. Berberan-Santos: Diamond Relat. Mater. 10 (2001) 168.
  23. N. I. Klyui, Y. P. Piryatinskii, and V. A. Semenovich: Mater. Lett. 35 (1998) 334.
  24. Y. Hayashi, K. Hagimoto, H. Ebisu, M. K. Kalaga, T. Soga, M. Umeno, and T. Jimbo: Jpn. J. Appl. Phys. 39 (2000) 4088[JSAP].
  25. J. Robertson: Mater. Sci. Eng. R 37 (2002) 129.
  26. Y. H. Wu, C. M. Hsu, C. T. Chia, I. N. Lin, and C. L. Cheng: Diamond Relat. Mater. 11 (2002) 804.
  27. H. Tanoue, M. Kamiya, Y. Suda, H. Takikawa, S. Oke, Y. Hasegawa, M. Taki, N. Tsuji, T. Ishikawa, and H. Yasui: Jpn. J. Appl. Phys. 50 (2011) 01AF12[JSAP].
  28. B. K. Gan, M. M. M. Bilek, A. Kondyurin, K. Mizuno, and D. R. McKenzie: Nucl. Instrum. Methods Phys. Res., Sect. B 247 (2006) 254.
|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information