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Jpn. J. Appl. Phys. 51 (2012) 020203 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Band-Structure Lineup at In_0.2Ga_0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy

Mahesh Kumar¹, Basanta Roul^1,2, Thirumaleshwara N. Bhat¹, Mohana K. Rajpalke¹, A. T. Kalghatgi², and S. B. Krupanidhi¹

¹Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
²Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

(Received November 25, 2011; accepted December 21, 2011; published online January 26, 2012)

In_0.2Ga_0.8N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In_0.2Ga_0.8N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08±0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found ∼0.74 eV and a type-II heterojunction.

URL: http://jjap.jsap.jp/link?JJAP/51/020203/
DOI: 10.1143/JJAP.51.020203

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