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Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy

Mahesh Kumar1, Basanta Roul1,2, Thirumaleshwara N. Bhat1, Mohana K. Rajpalke1, A. T. Kalghatgi2, and S. B. Krupanidhi1

1Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

(Received November 25, 2011; accepted December 21, 2011; published online January 26, 2012)

In0.2Ga0.8N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In0.2Ga0.8N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08±0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found ∼0.74 eV and a type-II heterojunction.

DOI: 10.1143/JJAP.51.020203

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