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Jpn. J. Appl. Phys. 51 (2012) 02BC04 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Kain Lu Low1, Chunlei Zhan1,2, Genquan Han1, Yue Yang1, Kian-Hui Goh1,3, Pengfei Guo1,2, Eng-Huat Toh3, and Yee-Chia Yeo1,2

1Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
2NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, 117456, Singapore
3GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, 738406, Singapore

(Received September 25, 2011; accepted November 1, 2011; published online February 20, 2012)

A novel tunneling field-effect transistor (TFET) with an L-shaped Ge source is investigated. The device comprises a Ge source that extends underneath a Si-channel region and separated from the drain by an insulator (SiO2). By optimizing the overlap length of the extended source LOV and the Si body thickness TSi, the current due to vertical band-to-band tunneling (BTBT) of the Ge–Si hetero-junction could be increased significantly and is scalable with LOV. This leads to higher ION and improved S. The SiO2 also reduces OFF-state current IOFF by blocking leakage paths. With extensive simulation, the device physics and design guidelines of this novel structure are outlined.

URL: http://jjap.jsap.jp/link?JJAP/51/02BC04/
DOI: 10.1143/JJAP.51.02BC04


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