Jpn. J. Appl. Phys. 51 (2012) 02BC05 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Characteristics of Hot Hole Injection, Trapping, and Detrapping in Gate Oxide of Polycrystalline Silicon Thin-Film Transistors

Yoshinari Kamakura^1,2, Takashi Himukashi¹, Hiroshi Tsuji¹, and Kenji Taniguchi¹

(Received September 26, 2011; accepted November 22, 2011; published online February 20, 2012)

The characterization and modeling of the hysteresis phenomenon observed in the off-state regime of n-channel polycrystalline thin-film transistors are presented. The shift in I_d–V_g characteristics between upward and downward scan were measured under various bias conditions and ambient temperatures. The localized positive charge build-up induced by band-to-band hot hole injection is responsible for the mechanism for reducing the off-leakage current, and it is recovered through the thermal emission of trapped holes, which is enhanced by self-heating of the device during the on-current conduction. On the basis of this model, the internal device characteristics related to the thermal and oxide trap properties are analyzed.

URL: http://jjap.jsap.jp/link?JJAP/51/02BC05/
DOI: 10.1143/JJAP.51.02BC05

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