Jpn. J. Appl. Phys. 51 (2012) 02BK09 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (359K)| |Buy This Article|

Characterization on Improved Effective Mobility of Pentacene Organic Field-Effect Transistors Using Graphene Electrodes

Sangchul Lee1, Gunho Jo2, Seok-Ju Kang3, Woojin Park3, Yung Ho Kahng4, Dong-Yu Kim1,3, Byoung Hun Lee1,3, and Takhee Lee2

1Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
2Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
3School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
4Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

(Received September 22, 2011; revised November 7, 2011; accepted November 16, 2011; published online February 20, 2012)

Pentacene organic field-effect transistors (OFETs) with multilayer graphene (MLG) films as the source and drain electrodes were fabricated. Pentacene OFETs with MLG electrodes showed significantly enhanced electrical property compared to devices with typically used Au electrodes because MLG electrode yields lower contact resistance and lower barrier height. Specifically, the pentacene OFETs with graphene electrodes exhibited increased output current by more than tenfold, high mobility as 0.4 cm2 V-1 s-1, and high on/off current ratio of 107. Our study may be useful for the development of organic transistors that are capable of producing improved performances.

URL: http://jjap.jsap.jp/link?JJAP/51/02BK09/
DOI: 10.1143/JJAP.51.02BK09


|Full Text PDF (359K)| |Buy This Article| Citation:


References | Citing Article (1)

  1. G. Horowitz: Adv. Mater. 10 (1998) 365[CrossRef].
  2. S. R. Forrest: Nature 428 (2004) 911[CrossRef].
  3. H. Yan, Z. Chen, Y. Zheng, C. Newman, J. R. Quinn, F. Dötz, M. Kastler, and A. Facchetti: Nature 457 (2009) 679[CrossRef].
  4. J. A. Nichols, D. J. Gundlach, and T. N. Jackson: Appl. Phys. Lett. 83 (2003) 2366[AIP Scitation].
  5. M. Shtein, J. Mapel, J. B. Benziger, and S. R. Forrest: Appl. Phys. Lett. 81 (2002) 268[AIP Scitation].
  6. C.-a. Di, D. Wei, G. Yu, Y. Liu, Y. Guo, and D. Zhu: Adv. Mater. 20 (2008) 3289[CrossRef].
  7. C.-G. Lee, S. Park, R. S. Ruoff, and A. Dodabalapur: Appl. Phys. Lett. 95 (2009) 023304[AIP Scitation].
  8. S. Lee, S.-J. Kang, G. Jo, M. Choe, W. Park, J. Yoon, T. Kwon, Y. H. Kahng, D.-Y. Kim, B. H. Lee, and T. Lee: Appl. Phys. Lett. 99 (2011) 083306[AIP Scitation].
  9. Y. H. Kahng, S. Lee, M. Choe, G. Jo, W. Park, J. Yoon, W.-K. Hong, C. H. Cho, B. H. Lee, and T. Lee: Nanotechnology 22 (2011) 045706[IoP STACKS].
  10. S. Lee, G. Jo, S.-J. Kang, G. Wang, M. Choe, W. Park, D.-Y. Kim, Y. H. Kahng, and T. Lee: Adv. Mater. 23 (2011) 100[CrossRef].
  11. Y.-Y. Lee, K.-H. Tu, C.-C. Yu, S.-S. Li, J.-Y. Hwang, C.-C. Lin, K.-H. Chen, L.-C. Chen, H.-L. Chen, and C.-W. Chen: ACS Nano 5 (2011) 6564.
  12. S. Pang, H. N. Tsao, X. Feng, and K. Müllen: Adv. Mater. 21 (2009) 3488[CrossRef].
  13. X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff: Science 324 (2009) 1312.
  14. S. Fukuda, H. Kajii, H. Okuya, T. Ogata, M. Takahashi, and Y. Ohmori: Jpn. J. Appl. Phys. 47 (2008) 1307[JSAP].
  15. G. Jo, J. Maeng, T.-W. Kim, W.-K. Hong, M. Jo, H. Hwang, and T. Lee: Appl. Phys. Lett. 90 (2007) 173106[AIP Scitation].
  16. M. Noborio, Y. Kanzaki, J. Suda, and T. Kimoto: IEEE Trans. Electron Devices 52 (2005) 1954[CrossRef].
  17. M. R. Pinto, E. Sangiorgi, and J. Bude: IEEE Electron Device Lett. 14 (1993) 375[CrossRef].
  18. L. Diao, C. D. Frisbie, D. D. Schroepfer, and P. P. Ruden: J. Appl. Phys. 101 (2007) 014510[AIP Scitation].
  19. H.-S. Seo, Y.-S. Jang, Y. Zhang, P. S. Abthagir, and J.-H. Choi: Org. Electron. 9 (2008) 432.
  20. J. Chen, L. C. Calvet, M. A. Reed, D. W. Carr, D. S. Grubisha, and D. W. Bennett: Chem. Phys. Lett. 313 (1999) 741[CrossRef].

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information