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Jpn. J. Appl. Phys. 51 (2012) 03CB05 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-k SrTa2O6

Li Lu1, Yuta Miura1, Takashi Nishida1,2, Masahiro Echizen1, Yasuaki Ishikawa1,2, Kiyoshi Uchiyama3, and Yukiharu Uraoka1,2

1Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
2CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
3Tsuruoka National College of Technology, Tsuruoka, Yamagata 997-8511, Japan

(Received July 20, 2011; accepted August 29, 2011; published online March 21, 2012)

In this research, an InZnO channel layer and a high-k SrTa2O6 gate insulator were both fabricated using a solution process for the application of thin film transistors (TFTs). A low turn-on voltage of -1.2 V, a low threshold voltage of 0.8 V, a high on/off current ratio of 5×106 at a low voltage of 5 V, and a saturation mobility of 0.24 cm2/(V·s) were obtained. The diffusion of oxygen from the high-k SrTa2O6 gate insulator to the InZnO channel layer through the interface was effective for decreasing the concentration of impurities in solution-processed InZnO TFTs and subsequently enhancing mobility. Furthermore, a very low subthreshold swing value of 0.1 V/decade was obtained. This low value was due to the very smooth surface and the voltage-independent high dielectric constant of 36 for the SrTa2O6 thin film.

URL: http://jjap.jsap.jp/link?JJAP/51/03CB05/
DOI: 10.1143/JJAP.51.03CB05


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