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Jpn. J. Appl. Phys. 51 (2012) 042201 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits

Jieun Lee1, Yasuna Maeda1, Yuki Atsumi1, Yuta Takino1, Nobuhiko Nishiyama1, and Sigehisa Arai1,2

1Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

(Received October 14, 2011; accepted February 2, 2012; published online March 19, 2012)

Low-power and compact optical interconnects can be realized using III–V membrane photonic integrated circuits fabricated from thin InP-based films bonded to a Si wafer using benzocyclobutene (BCB) adhesive wafer bonding method. However, the conditions of the bonding and fabrication process strongly affect the propagation loss of waveguides. This study investigated the process conditions during bonding and waveguide fabrication with a view to reducing the propagation loss. It was found that clean, large GaInAsP thin films without air voids or fractures could be obtained by using an appropriate solvent volatilization time of 20–30 min at 200 °C for BCB. Furthermore, by using a resist with high dry etching resistance and an SiO2 mask for the etching process, the sidewall roughness of the waveguide was significantly reduced, which finally afforded a waveguide propagation loss as low as 4 dB/cm.

URL: http://jjap.jsap.jp/link?JJAP/51/042201/
DOI: 10.1143/JJAP.51.042201


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