Jpn. J. Appl. Phys. 51 (2012) 04DA01 (4 pages)  |Next Article|  |Table of Contents|
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Water-Related Hole Traps at Thermally Grown GeO₂–Ge Interface

Yusuke Oniki and Tomo Ueno

(Received September 26, 2011; accepted December 12, 2011; published online April 20, 2012)

The generation mechanism of positive charge present in germanium oxide film thermally grown on a germanium substrate has been investigated in this study. Water-related hole traps are generated in the interfacial germanium suboxide layer. The negative flat-band voltage shift due to the charged hole traps increases with increasing electric stress field in the oxide. Both low-temperature growth of the oxide film and postmetallization annealing have been proposed for the improvement of the flat-band voltage shift. The former is effective in minimizing the suboxide layer thickness by suppressing germanium monoxide volatilization during the oxide growth. The latter method successfully reduces the density of traps caused by water desorption from the interfacial suboxide layer.

URL: http://jjap.jsap.jp/link?JJAP/51/04DA01/
DOI: 10.1143/JJAP.51.04DA01

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