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Jpn. J. Appl. Phys. 51 (2012) 04DA02 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Characteristics of Defect Generation and Breakdown in SiO2 for Polycrystalline Silicon Channel Field-Effect Transistor

Izumi Hirano, Masumi Saitoh, Toshinori Numata, and Yuichiro Mitani

Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan

(Received September 26, 2011; accepted December 24, 2011; published online April 20, 2012)

In this study, the defect generation and breakdown characteristics of a polycrystalline silicon (poly-Si) channel field-effect transistor (FET) have been investigated in detail from the channel area scaling point of view. In the case of a sufficiently larger channel area than the grain size of poly-Si, it was found that defects in SiO2 on a poly-Si channel are more easily created than those on a Si(100) channel and a smaller Weibull slope of charge to breakdown (Qbd) for the poly-Si channel than that for the Si(100) channel was observed, resulting in poor reliabilities. When the channel area is reduced to a similar size to that of the grains, the Weibull slope of Qbd for the poly-Si channel FETs becomes steeper and close to that for the Si(100) channel. Grain size control and surface orientation engineering of the poly-Si channel are required to improve the reliability for further scaled poly-Si channel devices.

URL: http://jjap.jsap.jp/link?JJAP/51/04DA02/
DOI: 10.1143/JJAP.51.04DA02


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