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Jpn. J. Appl. Phys. 51 (2012) 04DA03 (7 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Dan Dan Zhao1,2,3, Choong Hyun Lee1,2, Tomonori Nishimura1,2, Kosuke Nagashio1,2, Guo An Cheng3, and Akira Toriumi1,2

1Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
2JST-CREST, Bunkyo, Tokyo 113-8656, Japan
3College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China

(Received September 27, 2011; accepted January 4, 2012; published online April 20, 2012)

The operation of germanium (Ge) dual-gated junctionless p-channel field-effect transistors (DG JL pFETs) is demonstrated. The top-gated hole mobility is approximately 120 cm2·V-1·s-1, which is close to the bulk mobility of p-type Ge with a doping concentration of 1019 cm-3. The mobility has a weak hole density dependence and increases by applying a negative bottom gate voltage. In addition, simple analytical expressions for both the current–voltage characteristics and the threshold voltage in the linear region of the DG JL pFET are described. The result shows that normally-off Ge DG JL pFETs are achievable. Furthermore, the threshold voltage variation due to the random dopant number fluctuations in the channel is also discussed, which indicates that it can be reduced by decreasing the Ge and oxide thicknesses.

URL: http://jjap.jsap.jp/link?JJAP/51/04DA03/
DOI: 10.1143/JJAP.51.04DA03


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