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Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO2 Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique
Hiroshi Seki,
Yasuhiro Shibuya1,
Daisuke Kobayashi2,
Hiroshi Nohira1,
Kenji Yasuoka, and
Kazuyuki Hirose2
School of Science for Open and Environmental System, Graduate School of Science and Technology, Keio University, Yokohama 223-8522, Japan
1Electrical and Electronic Engineering, Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan
2Institute of Space and Astronautical Science, JAXA, Sagamihara 252-5210, Japan
(Received September 26, 2011; accepted December 2, 2011; published online April 20, 2012)
To achieve metal–oxide–semiconductor field-effect transistors (MOSFETs) with high reliability, it is important to investigate the dielectric breakdown of gate oxide films of MOSFETs. It is known that dielectric breakdown is usually due to the presence of defects in films. Estimating the breakdown electric-field strength while reflecting local structures such as defects is important for investigation of the reliability of gate SiO2 films. In this study, we introduce the “recovery rate”, which is a parameter potentially capable of estimating the breakdown electric-field strength while reflecting the local structures of the film. The recovery rate has a strong correlation with the breakdown electric-field strength of bulk Si and Al compounds. Using this correlation, we estimate the breakdown electric-field strength of SiO2 with oxygen vacancies and strains.
URL:
http://jjap.jsap.jp/link?JJAP/51/04DA07/
DOI: 10.1143/JJAP.51.04DA07
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