Jpn. J. Appl. Phys. 51 (2012) 04DB01 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Fabrication of Graphene Directly on SiO₂ without Transfer Processes by Annealing Sputtered Amorphous Carbon

Motonobu Sato, Manabu Inukai¹, Eiji Ikenaga¹, Takayuki Muro¹, Shuichi Ogawa², Yuji Takakuwa², Haruhisa Nakano, Akio Kawabata, Mizuhisa Nihei, and Naoki Yokoyama

(Received September 27, 2011; accepted January 24, 2012; published online April 20, 2012)

We fabricated multilayer graphene directly on SiO₂ by annealing sputtered amorphous carbon with a catalyst – a simple non-chemical vapor deposition method – without the use of complicated transfer processes. Structural analysis revealed that the graphene sheets formed an epitaxial structure aligned to the Co(111) surface between the Co catalyst and SiO₂ dielectric. In the multilayer graphene, a resistivity of approximately 500 µΩ cm was obtained, which is one order of magnitude higher than that of highly oriented pyrolytic graphite.

URL: http://jjap.jsap.jp/link?JJAP/51/04DB01/
DOI: 10.1143/JJAP.51.04DB01

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